The impact of the air environment on the electrical conductivity of nanocrystalline thin SiC films formed on sapphire by direct ion deposition was studied. Gas sensitivity studies were performed on two series of nc-SiC films with distinct structures: the first series was monopolytypic and comprised mostly 3C-SiC polytype nanocrystals, while the second series was a nanoheterostructure including a mix of 3C-SiC and 21R-SiC nanocrystals. The films developed gas sensitivity after annealing in vacuum at temperatures exceeding 500 K. At 700 K, tests of the films' gas sensitivity to the air atmosphere revealed that the monopolytype film's resistance increased 12 times and the heteropolytype film's resistance increased approximately 16 times.
The goal of this study was to evaluate the effect of the air atmosphere on the electrical conductivity of thin nanocrystalline SiC films with distinct polytype structures at different temperatures.Author(S) Details
A. V. Semenov
National Technical University “Kharkiv Polytechnic Institute”, Kharkiv, 2, Kyrpychova Str., 61002, Ukraine.
A. A. Kozlovskyi
Institute for Single Crystals NAS of Ukraine, Nauky Ave. 60, Kharkiv, 61001, Ukraine.
S. N. Skorik
Institute for Single Crystals NAS of Ukraine, Nauky Ave. 60, Kharkiv, 61001, Ukraine.
D. V. Lubov
National Technical University “Kharkiv Polytechnic Institute”, Kharkiv, 2, Kyrpychova Str., 61002, Ukraine.
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