Friday, 18 March 2022

Properties of Boron-Doped Diamond and One-Dimensional-Metal-Oxide Based P-N Heterojunction: A Review| Chapter 2 | Recent Trends in Chemical and Material Sciences Vol.7

This review focuses on the optoelectronic properties of diamond-based one-dimensional metal-oxide heterojunctions. We begin by briefly describing the current state of research on one-dimensional (1D) metal-oxide heterojunctions and the characteristics of the p-type boron-doped diamond (BDD) film; we then go over the use of three oxide types (ZnO, TiO2, and WO3) in diamond-based-1D-metal-oxide heterojunctions, including fabrication, epitaxial growth, photocatalytic properties, electrical transport behaviour, and negative differential resistance behaviour, especially Finally, we look at the research's issues and future tendencies. A decade of study into high-performance diamond-based heterojunctions will aid in the development of photoelectric nano-devices for high-temperature and high-power applications.

Author(s) Details:

Yu Yao,
School of Physics Science and Information Technology, Shandong Key Laboratory of Optical Communication Science and Technology, Liaocheng University, Shandong 252000, China.


Dandan Sang,
School of Physics Science and Information Technology, Shandong Key Laboratory of Optical Communication Science and Technology, Liaocheng University, Shandong 252000, China.


Liangrui Zou,
School of Physics Science and Information Technology, Shandong Key Laboratory of Optical Communication Science and Technology, Liaocheng University, Shandong 252000, China.


Xueting Wang,
School of Physics Science and Information Technology, Shandong Key Laboratory of Optical Communication Science and Technology, Liaocheng University, Shandong 252000, China.


Qinglin Wang,
School of Physics Science and Information Technology, Shandong Key Laboratory of Optical Communication Science and Technology, Liaocheng University, Shandong 252000, China.

Please see the link here: https://stm.bookpi.org/RTCAMS-V7/article/view/6095

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