Achievement of a UV Photodetector Based on TiO2/CuMnO2 Heterostructures: A New Strategy | Chapter 8 | Chemical and Materials Sciences: Developments and Innovations Vol. 10

Recently, UV sensors and photodetectors have drawn growing attention due to their wide applications in environmental safety, biological research, medicine, gas sensors, optical communication, astronomical studies, space exploration, etc. Within this paper, a UV photodetector based on n-type TiO₂ and p-type CuMnO₂ heterojunction was successfully achieved using a simple, reproducible and cost-effective two-step method: thermal oxidation growth of TiO₂ layers on titanium foil and deposition of CuMnO₂ thin films by the Doctor Blade technique, respectively. To investigate the structural and morphological properties of the as-synthesized heterostructures, XRD, SEM/EDX and AFM techniques were used. Therefore, XRD analysis confirmed the phase stability and purity of the structures, while SEM and AFM revealed the uniform coverage of CuMnO₂ on the polyhedral TiO₂ surface. Based on Mott-Schottky results, the optoelectronic performance and the flat band potential are influenced by the thickness and roughness of the TiO₂ layer. Electrical measurements demonstrated a diode-like behavior with the turn-on voltage increasing proportionally to the structure of the TiO₂ layer, therefore the S2a sensor showed optimal performance with a UV sensitivity of 4.99, a response capacity of 100.6 mA mW⁻¹ cm², and a fast response time of 1.56 s. The results indicate that the proposed heterojunction offers a promising solution for selective and efficient UV light detection systems. In conclusion, UV photodetectors based on n-TiO₂ and a p-CuMnO₂ heterojunction were successfully obtained via a simple, reproducible and inexpensive method, and have great potential applications in light detection systems.

 

Author (s) Details

 

Mircea Nicolaesc
Condensed Matter Department, National Institute for Research and Development in Electrochemistry and Condensed Matter, 300224 Timisoara, Romania and Department of Applied Chemistry and Engineering of Inorganic Compounds and Environment, Politehnica University of Timisoara, 300223 Timisoara, Romania.

 

Corina Orha
Condensed Matter Department, National Institute for Research and Development in Electrochemistry and Condensed Matter, 300224 Timisoara, Romania.

 

Mina-Ionela Morariu (Popescu)
Condensed Matter Department, National Institute for Research and Development in Electrochemistry and Condensed Matter, 300224 Timisoara, Romania and Department of Applied Chemistry and Engineering of Inorganic Compounds and Environment, Politehnica University of Timisoara, 300223 Timisoara, Romania.

 

Viorel Serban
Department of Materials and Manufacturing Engineering, Faculty of Mechanical Engineering, University Politehnica of Timisoara, Mihai Viteazu Street, No. 1, 300222 Timisoara, Romania.

 

Simona Caprarescu
Department of Inorganic Chemistry, Physical Chemistry and Electrochemistry, National University of Science and Technology POLITEHNICA Bucharest, 1-7 Polizu Street, 011061 Bucharest, Romania.

 

Carmen Lazau
Condensed Matter Department, National Institute for Research and Development in Electrochemistry and Condensed Matter, 300224 Timisoara, Romania.

 

Cornelia Bandas
Condensed Matter Department, National Institute for Research and Development in Electrochemistry and Condensed Matter, 300224 Timisoara, Romania.

 

Please see the book here:- https://doi.org/10.9734/bpi/cmsdi/v10/4345

CdTe/CdS heterojunction Solar Cell suitable for Low-Illumination Applications | Chapter 10 | New Trends in Physical Science Research Vol.5

 Because CdTe is a particularly durable and chemically stable II-VI class semiconducting semiconductor, its associated solar cell thin film photovoltaic technology is now the sole thin film technology in the top ten global manufacturers. With an open circuit voltage of 1 V and a short circuit current density above 30 mA/cm2, CdTe has a band gap of roughly 1.5 eV, which is optimal for the Schockley-Queisser limit, and may offer very high theoretical efficiency of single junction device of more than 32%. CdTe solar cells were first presented in the early 1970s and have been extensively researched and deployed over the last 30 years. The effect of operating temperature, absorber and buffer layer thicknesses, and work function of contacting metals at the two ends of the PV device at very low incident power were studied using SCAPS-1D software on a simple structure of CdTe/CdS heterostructure photovoltaic device, in which CdTe acts as an active layer and CdS acts as a buffer later. This research will aid in the development of an efficient and cost-effective solar cell for low-incident-power portable electronic devices such as laptop computers and mobile phones, as most of these gadgets function with dispersed and reflected sunshine. We simulated a simple CdTe PV cell with a good efficiency at very low incident power in this study. We explored the influence of temperature, work function, and absorber layer thickness on solar cell efficiency in this article. The efficiency of the device reduces as the temperature rises. Various device properties are nearly consistent for work functions between 5.7 eV and 6.35 eV. The efficiency of the device is unaffected by increasing the thickness of the primary absorber layer CdTe beyond 500 nm.

Author(s) Details:

Anver Aziz,
Physics Department, Jamia Millia Islamia, New Delhi, India.

Nisha Devi,
Saraswati Mahila Mahavidyalaya, Palwal, Haryana, India.

Please see the link here: https://stm.bookpi.org/NTPSR-V5/article/view/7166

Excellent Electrical Properties of n-ZnO Nanowire/p-B-doped Diamond Heterojunction | Chapter 3 | Recent Trends in Chemical and Material Sciences Vol.7

The high-temperature carrier electrical transport behaviour of n-ZnO nanowires (NWs)/p-diamond heterojunctions is investigated in this study. With a low turn on voltage, the rectifying action was seen (0.8 V). The forward current of the n-ZnO nanorods (NRs)/p-BDD heterojunction is 12 times higher at 5 V than the bigger diameter of the NRs/p-BDD heterojunction. At various bias voltages, we examine temperature-dependent carrier transport processes, recombination tunnelling, and space-charge-limited current conduction in n-ZnO NWs/p-BDD and n-ZnO NRs/p-BDD heterojunctions. The carrier injection process mechanism for ZnO NWs/BDD is investigated using the proposed equilibrium energy band diagrams. The I-V characteristics of the ZnO NWs/BDD heterojunction are improved, and the electrical transport qualities are relatively good. This study broadens and improves the applications of diamond-based gadgets.

Author(s) Details:

Yu Yao,
School of Physics Science and Information Technology, Shandong Key Laboratory of Optical Communication Science and Technology, Liaocheng University, Shandong 252000, China.


Dandan Sang,
School of Physics Science and Information Technology, Shandong Key Laboratory of Optical Communication Science and Technology, Liaocheng University, Shandong 252000, China.


Liangrui Zou,
School of Physics Science and Information Technology, Shandong Key Laboratory of Optical Communication Science and Technology, Liaocheng University, Shandong 252000, China.


Xueting Wang,
School of Physics Science and Information Technology, Shandong Key Laboratory of Optical Communication Science and Technology, Liaocheng University, Shandong 252000, China.


Qinglin Wang,
School of Physics Science and Information Technology, Shandong Key Laboratory of Optical Communication Science and Technology, Liaocheng University, Shandong 252000, China.

Please see the link here: https://stm.bookpi.org/RTCAMS-V7/article/view/6096

Properties of Boron-Doped Diamond and One-Dimensional-Metal-Oxide Based P-N Heterojunction: A Review| Chapter 2 | Recent Trends in Chemical and Material Sciences Vol.7

This review focuses on the optoelectronic properties of diamond-based one-dimensional metal-oxide heterojunctions. We begin by briefly describing the current state of research on one-dimensional (1D) metal-oxide heterojunctions and the characteristics of the p-type boron-doped diamond (BDD) film; we then go over the use of three oxide types (ZnO, TiO2, and WO3) in diamond-based-1D-metal-oxide heterojunctions, including fabrication, epitaxial growth, photocatalytic properties, electrical transport behaviour, and negative differential resistance behaviour, especially Finally, we look at the research's issues and future tendencies. A decade of study into high-performance diamond-based heterojunctions will aid in the development of photoelectric nano-devices for high-temperature and high-power applications.

Author(s) Details:

Yu Yao,
School of Physics Science and Information Technology, Shandong Key Laboratory of Optical Communication Science and Technology, Liaocheng University, Shandong 252000, China.


Dandan Sang,
School of Physics Science and Information Technology, Shandong Key Laboratory of Optical Communication Science and Technology, Liaocheng University, Shandong 252000, China.


Liangrui Zou,
School of Physics Science and Information Technology, Shandong Key Laboratory of Optical Communication Science and Technology, Liaocheng University, Shandong 252000, China.


Xueting Wang,
School of Physics Science and Information Technology, Shandong Key Laboratory of Optical Communication Science and Technology, Liaocheng University, Shandong 252000, China.


Qinglin Wang,
School of Physics Science and Information Technology, Shandong Key Laboratory of Optical Communication Science and Technology, Liaocheng University, Shandong 252000, China.

Please see the link here: https://stm.bookpi.org/RTCAMS-V7/article/view/6095

Study on Heterophotocell Based on Super-line Photoventil Effect | Chapter 03 | Research Trends and Challenges in Physical Science Vol. 7

 The research investigates the superliner photovoltaic effect related with the alteration of pCu2S-nSi heterojunctions by introducing a silicon nanocluster subsystem at the junction border. A photocell with two sequentially articulated p-n junctions of counter action that are photoactive in separate parts of the spectrum is proposed. We demonstrate that film heterojunctions with a nanocluster subsystem differ from the non-clustered variant. Heterophotocells without a nanocluster subsystem always have sublinear or, in rare cases, linear lux-ampere characteristics (up to illumination 5 104 lx), whereas introducing nanocluster centres into the base p-region of the Cu2S-Si heterojunctions results in a significantly higher integral sensitivity at high illumination of the samples in the mode of a valve photocell. When the size of NC centres is increased to hundreds or more angstroms, the photoeffect is not only not amplified, but entirely disappears, giving place to a new effect of superlinearity of the lux-ampere characteristic. The newly discovered superliner photoeffect in a heterophotocell based on an NCS increases cell photosensitivity under high illumination.

Author(S) Details

V. V. Kovalchuk
State Environmental University, Odesa, Ukraine.

View Book:- https://stm.bookpi.org/RTCPS-V7/article/view/5995

Photovoltaic Intelligent Gas Sensors Based on Porous Silicon-crystalline Silicon Heterojunction. Technology and Application | Chapter 5 | Research Trends and Challenges in Physical Science Vol. 4

 The concentration of polar gases in the measuring chamber affects the way of employing photo-electromotive forces on the heterojunction between porous silicon thin layer and crystalline silicon wafer. Electrochemical etching on a p-type silicon wafer produced the porous silicon thin layer. To this porous layer, a gas and light transparent electrical contact was created. Controlling the intensity of illumination light can improve photo-EMF sensitivity corresponding to a wide range of gas concentrations. When the magnitude of the gas concentration matches to the optimal intensity of the illuminating light, the measurement error is the smallest. The study used NI LabVIEW-engineered modules for automatic control to increase measurement precision across a wide spectrum of gases. This intelligent gas sensors system, which uses modern wireless network technology, could be valuable in the chemical sector for real-time gas detection. Ammonia, acetone, ethanol, and mercaptoethanol were all tested using photovoltaic gas sensors.

Author(S) Details

Yuriy Vashpanov
Department of Physics, Odessa State Academy of Civil Engineering and Architecture, Odessa, 65029, Ukraine. and Electrical and Computer Engineering Division, Hanyang Institute of Technology, Hanyang University, Seoul 133-791, Republic of Korea.

Kae Dal Kwack
Electrical and Computer Engineering Division, Hanyang Institute of Technology, Hanyang University, Seoul 133-791, Republic of Korea.

View Book:- https://stm.bookpi.org/RTCPS-V4/article/view/4555