The high-temperature carrier electrical transport behaviour of n-ZnO nanowires (NWs)/p-diamond heterojunctions is investigated in this study. With a low turn on voltage, the rectifying action was seen (0.8 V). The forward current of the n-ZnO nanorods (NRs)/p-BDD heterojunction is 12 times higher at 5 V than the bigger diameter of the NRs/p-BDD heterojunction. At various bias voltages, we examine temperature-dependent carrier transport processes, recombination tunnelling, and space-charge-limited current conduction in n-ZnO NWs/p-BDD and n-ZnO NRs/p-BDD heterojunctions. The carrier injection process mechanism for ZnO NWs/BDD is investigated using the proposed equilibrium energy band diagrams. The I-V characteristics of the ZnO NWs/BDD heterojunction are improved, and the electrical transport qualities are relatively good. This study broadens and improves the applications of diamond-based gadgets.
Author(s) Details:
Yu Yao,
School of Physics Science and Information Technology, Shandong Key
Laboratory of Optical Communication Science and Technology, Liaocheng
University, Shandong 252000, China.
Dandan Sang,
School of Physics Science and Information Technology, Shandong Key Laboratory
of Optical Communication Science and Technology, Liaocheng University, Shandong
252000, China.
Liangrui Zou,
School of Physics Science and Information Technology, Shandong Key Laboratory
of Optical Communication Science and Technology, Liaocheng University, Shandong
252000, China.
Xueting Wang,
School of Physics Science and Information Technology, Shandong Key Laboratory
of Optical Communication Science and Technology, Liaocheng University, Shandong
252000, China.
Qinglin Wang,
School of Physics Science and Information Technology, Shandong Key Laboratory
of Optical Communication Science and Technology, Liaocheng University, Shandong
252000, China.
Please see the link here: https://stm.bookpi.org/RTCAMS-V7/article/view/6096
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