The Novel Linearly and Circularly Polarized Dipolelike Antennas Fed by the Rectangular Waveguide| Chapter 10 | Innovations in Science and Technology Vol.8

 The induced electromotive force (EMF) approach is used to suggest and develop two types of modified waveguide-fed dipole-like antennas. The conventional rectangular waveguide is used to excite both the linearly polarised antenna's arms with two equal in magnitude and out-of-phase excitations. The antennas' radiations have a high polarisation purity since the area around the radiating arms is devoid of any conductors (save for a finite ground plane). In addition, the split-coaxial balance unit is used in an unique circularly polarised waveguide-fed crossed dipole-like radiator. The design validity of the stand-alone antennas operating at 1.7 GHz and 2.0 GHz was verified through fabrication and testing. The results show that the proposed antennas have an impedance bandwidth of 1.68–1.71 GHz (fractional frequency band 0.03 GHz, relative band 1.8 percent) for linearly polarised radiation, and 1.95–2.05 GHz (0.1 GHz, 5%) for circularly polarised radiation, with a 3 dB axial ratio bandwidth of 1.98–2.02 GHz (0.04 GHz, 2%). The far-field patterns and the amount of the reflection coefficient accord well with the simulation-derived values. These antennas can be used as a component of linearly polarised waveguide-fed E- and H-arrayed assemblies, as well as circularly polarised stand-alone radiators. The proposed method sets the path for the development of waveguide-fed antennas in the future.

Author(s) Details:

D. A. Buhtiyarov,
Department of Radio Engineering and Electronics, Novosibirsk State Technical University, Novosibirsk 630073, Russia.


A. P. Gorbachev,
Department of Radio Engineering and Electronics, Novosibirsk State Technical University, Novosibirsk 630073, Russia.


V. V. Atuchin,
Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia and Functional Electronics Laboratory, Tomsk State University, Tomsk 634050, Russia and Laboratory of Semiconductor and Dielectric Materials, Novosibirsk State University, Novosibirsk 630090, Russia.

Please see the link here: https://stm.bookpi.org/IST-V8/article/view/6251