Because CdTe is a particularly durable and chemically stable
II-VI class semiconducting semiconductor, its associated solar cell thin film
photovoltaic technology is now the sole thin film technology in the top ten
global manufacturers. With an open circuit voltage of 1 V and a short circuit
current density above 30 mA/cm2, CdTe has a band gap of roughly 1.5 eV, which
is optimal for the Schockley-Queisser limit, and may offer very high
theoretical efficiency of single junction device of more than 32%. CdTe solar
cells were first presented in the early 1970s and have been extensively
researched and deployed over the last 30 years. The effect of operating
temperature, absorber and buffer layer thicknesses, and work function of
contacting metals at the two ends of the PV device at very low incident power
were studied using SCAPS-1D software on a simple structure of CdTe/CdS
heterostructure photovoltaic device, in which CdTe acts as an active layer and
CdS acts as a buffer later. This research will aid in the development of an
efficient and cost-effective solar cell for low-incident-power portable
electronic devices such as laptop computers and mobile phones, as most of these
gadgets function with dispersed and reflected sunshine. We simulated a simple
CdTe PV cell with a good efficiency at very low incident power in this study.
We explored the influence of temperature, work function, and absorber layer
thickness on solar cell efficiency in this article. The efficiency of the
device reduces as the temperature rises. Various device properties are nearly
consistent for work functions between 5.7 eV and 6.35 eV. The efficiency of the
device is unaffected by increasing the thickness of the primary absorber layer
CdTe beyond 500 nm.
Author(s) Details:
Anver Aziz,
Physics Department, Jamia Millia Islamia, New Delhi, India.
Nisha Devi,
Saraswati Mahila Mahavidyalaya, Palwal, Haryana, India.
Please see the link here: https://stm.bookpi.org/NTPSR-V5/article/view/7166
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