Analytical Model for Electrical Field at Ultrathin Field Emitter| Chapter 8 | Newest Updates in Physical Science Research Vol. 7

 An analytical model is used to define the potential barrier near the apex of an ultrathin edge field emitter. It is used to numerically simulate electron tunnelling from the emitter. The results reveal that the typical approximation of a uniform field towards the edge is incorrect for an ultrathin emitter. Modeling field emission from nano-sized cold cathodes is easier with the proposed method. The results are applicable to nanoscale cold cathode structures, such as graphene field emitters.

Author(s) Details

V. A. Fedirko
Keldysh Institute of Applied Mathematics, Moscow, Russia.

Sergey Polyakov
Keldysh Institute of Applied Mathematics, Moscow, Russia

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