A new approach of three-spatial electro-chemical etchings both in upright and lateral current guidances on grid ditched Si pn-buildings is originally proposed. Under the provocation of UV light, lateral etchings on the various ditching zones result in unconnected porosities on porous Si, which create visible lights at miscellaneous wavelengths. Therefore, this novel method enables the concurrent emission of several wavelengths of alterable visible light from a sole Si-based device. Moreover, the inscription conditions on porous Si films and their accompanying wavelengths can be fine-tuned by district sizes. Compared with the unoriginal method, the new approach provides a new alternative for multi-wavelength chip design with a exact patterning for porous Si outside any mask and photoresist. In conclusion, a novel method established three-dimensional electrochemistry etching on a gridiron ded pn-diode structure is originally described to create a multi-awareness light emission on a single absorbent Si chip. This method everything well for mask-free patterning, wavelength adjustment by region size, and multi-wavelength light issuance chips. A exact light emission pattern corresponding accompanying the ditching contour is presented by the patterning design utilizing/without hole-draining, porous Si structures accompanying various porosities on various zones.
Author(s) Details:
Jia-Chuan Lin,
Department
of Electrical Engineering, National Taipei University, New Taipei City, Taiwan.
Yu-Chen
Huang,
Department
of Electrical Engineering, National Taipei University, New Taipei City, Taiwan.
No comments:
Post a Comment