TiO2 Nanoparticles Acid-assisted Synthesis and the Enhanced Visible-light Photocatalytic Activity | Chapter 10 | Fundamental Research and Application of Physical Science Vol. 6

 The inhomogeneities of the alloy/semiconductor (M/S) interface have existed investigated for many decades and various models have been projected to explain the physics of the connect state in such contacts. Two main and famous approaches are noted in this affiliate book explaining the physics behind the ore/semiconductor (Schottky diode) interface state: the Werner and Guttler’s model and the Tung’s model. The projected approaches are based on the hotness dependent of ultimate important limit characterizing the M/S connect: the barrier extreme Φ B. Accordingly, the temperature effect on the additional parameters, that typify the current-voltage calculations like the mean barrier extreme Φ- B0, the standard deviation σ s, the strength coefficients p2 and p3 for the barrier extreme and the standard deviation individually, and the series fighting Rs, is also authorizing the evidence the inhomogeneity of the interface betwixt the metal and the semiconductor. In the light concerning this concept, a deep reasoning is made on united states of america of the Mo/n-type-4H-SiC Schottky diode in the range of temperature (298-498) K by way of its current-energized matter measurements. The study is based on the concurrent extraction of the limits (`Φ- B0, p2, p3, ps, σs) that define the current-power measurements as function of hotness by using the upright optimization procedure (VOM). In order to explain the acquired results, we have used the Werner and Guttler’s model to authorize the inhomogeneity of the Mo/4H-SiC interface in the intentional range of temperature. The analyses reported in this place book chapter for the Mo/n-type4H-SiC contact reinforce the existence of an inhomogeneous connect by the use of the Werner and Guttler’s approach.

Author(s) Details:

Yi-Jie Gu,
College of Electronics and Information Engineering, Hangzhou Dianzi University, Hangzhou, China.

Ming Zhou,
College of Electronics and Information Engineering, Hangzhou Dianzi University, Hangzhou, China.

Zhihua Dong,
College of Electronics and Information Engineering, Hangzhou Dianzi University, Hangzhou, China.

Zhiqun Cheng,
College of Electronics and Information Engineering, Hangzhou Dianzi University, Hangzhou, China.

Tian-Song Deng,
College of Electronics and Information Engineering, Hangzhou Dianzi University, Hangzhou, China.

Please see the link here: https://stm.bookpi.org/FRAPS-V6/article/view/10836