ZnO is typically an n-type semiconductor with the expansive direct band gap of 3.37 eV and the material is naturally plentiful in the earth’s crust. Owing to allure low toxicity ZnO finds request in devices like cosmic cells, flat panel displays and thin film transistors. It is a important wide bandgap material accompanying appreciable transparence which is widely handled in transparent conducting group of chemical elements layer requests. However, metal sedating on ZnO reports was extensively investigated for bringing into harmony the electrical features. This article is met on pulsed ray of light deposition of ZnO-Y2O3 (YZO) thin films with differing concentrations of Y2O3 (0-5%) as a dopant in ZnO. X-ray diffraction range of the YZO thin films exhibits the presence of having six of something wurtzite structure with a favored orientation near the (002) plane. Morphology aspects of the film accept with XRD results that shows a uniform distribution till 2 wt% and resulted ingrain growth accompanying increasing wt% of Y2O3. The influence of Y2O3 aggregation on the optical travel of ZnO is investigated by UV- Vis spectroscopy. The electrical resistivity of the located films is in the order ∼10-4 that was on par with the former reports suitable for TCO applications.
Author(s) Details:
A. Youvanidha,
Department
of Nanosciences, Karunya Institute of Technology and Sciences,
Coimbatore-641114, India.
B.
Vidhya,
Department
of Nanosciences, Karunya Institute of Technology and Sciences,
Coimbatore-641114, India and Department of Physics, Karunya Institute of
Technology and Sciences, Coimbatore-641114, India.
P. Issac Nelson,
Department of Physics, Karunya Institute of Technology and Sciences,
Coimbatore-641114, India.
R. Rathes Kannan,
Department of Physics, Karunya Institute of Technology and Sciences,
Coimbatore-641114, India.
S. K. Suresh Babu,
Department of Nanosciences, Karunya Institute of Technology and Sciences,
Coimbatore-641114, India.
Please
see the link here: https://stm.bookpi.org/NFPSR-V3/article/view/8587
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