Study of Anisotropic Strain in Self-Assembled GaN Microdisks Grown by Molecular Beam Epitaxy| Chapter 1 | Recent Progress in Chemical Science Research Vol. 6

Systematic research has existed done on lattice entertainment on wurtzite GaN microdisks produced by plasma-helped molecular beam epitaxy. High-resolution broadcast electron microscopy was used to assess the trellis constants of GaN microdisks. The anisotropic strain was analyzed for one microscopic nuclear layers of GaN microdisks. We learned that the sideways lattice strain along a-hinge followed a linear connection during the epi-growth, while the upright lattice strain with c-spindle exhibited a quadratic departure.

Author(s) Details:

Ying-Chieh Wang,
Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung-80424, Taiwan.

Hong-Yi Yang,
Department of Physics, National Sun Yat-Sen University, Kaohsiung-80424, Taiwan.

Ikai Lo,
Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung-80424, Taiwan and Department of Physics, National Sun Yat-Sen University, Kaohsiung-80424, Taiwan.

Cheng-Da Tsai,
Department of Physics, National Sun Yat-Sen University, Kaohsiung-80424, Taiwan.

Huei-Jyun Shih,
Department of Physics, National Sun Yat-Sen University, Kaohsiung-80424, Taiwan.

Hui-Chun Huang,
Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung-80424, Taiwan.

Mitch M. C. Chou,
Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung-80424, Taiwan.

Louie Huang,
Advanced Semiconductor Engineering, Inc., Kaohsiung-811, Taiwan.

Terence Wang,
Advanced Semiconductor Engineering, Inc., Kaohsiung-811, Taiwan.

Ching T. C. Kuo,
Advanced Semiconductor Engineering, Inc., Kaohsiung-811, Taiwan.

Please see the link here: https://stm.bookpi.org/RPCSR-V6/article/view/9247