The heat dependences of the photoelectric condition factor and the complete electrical produce power of n- and p-type Six Ge1-x, in addition to the reliances of the Seebeck coefficient on the indicated and the universal conductivities, are intentional. The direct masses and mobilities of charge shippers are determined for various temperatures, hotness reliances of the eleqtronic quality cause and the thermoelectric figure of merit are studied. Monolithic bundle established an alloy accompanying the arrangement Si0.7Ge0.3 of n- and p-type conductivity are formed. The energy characteristics of these monolithic thermoelectric modules have took place studied.
Author(s) Details:
Guram Bokuchava,
Sukhumi Institute of Physics and Technology,
Georgia.
Irakli
Nakhutsrishvili,
Institute
of Cybernetics of Georgian Technical University, Georgia.
Karlo Barbakadze,
Sukhumi Institute of Physics and Technology, Georgia.
Please see the link here: https://stm.bookpi.org/FRAPS-V4/article/view/10592
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