This work looks at the design and simulation of Ga2O3 power MOSFETs with source-field plating, as well as the breakdown voltage, interface oxide charges, and their relationship to the threshold voltage. A threshold voltage of -50 V is calculated for the device structure considered. This number is equivalent to reported experimental results with a similar device shape and physical parameters, where a simulation assumes an interface oxide charge density of 5 x1013 /cm2. When a channel doping density of 1.5 x 1016 cm-3 is utilised, simulation results show a breakdown voltage of 600 V and a Ron resistance of 40 mm for Ga2O3 n-MOSFETs. These findings are consistent with other researchers' measurements of electric field breakdown and Ron resistance.
Author(S) Details
H. Fardi
Department of Electrical Engineering, University of Colorado Denver, Colorado, USA.
View Book:- https://stm.bookpi.org/NAER-V16/article/view/4057
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