Deposition and Characterization of ZnO Thin Films by Solution Growth Technique with Ammonia (NH3) as a Complexing Agent Solution growth approach was used to form zinc oxide thin films on glass slides at temperatures ranging from 60 to 100 degrees Celsius in a 1M NaOH solution. The films were proven to be ZnO thin films using X-ray fluorescence (XRF) and Rutherford Backscattering Spectroscopy (RBS) investigations. The optical transmittance of ZnO films ranged from 20.6 percent to 65.6 percent in the ultraviolet, 70.2 percent to 79.2 percent in the visible, and 79.5 percent to 81.6 percent in the near-infrared. The absorbance of ZnO films was reported to be 25.5 percent to 68.6% in the UV, 10% to 18.3% in the visible range, and 8.8 percent to 9.96 percent in the near-infrared region of the electromagnetic spectrum. Throughout the electromagnetic spectrum, ZnO thin films showed low reflectance (9.6 percent to 20.3 percent ). For ZnO thin films, direct band gap values of 3.31eV were found. The gravimetric approach was used to produce a thickness of 0.082m for ZnO films. The refractive index, optical conductivity, absorption coefficient, and dielectric constants were among the other parameters studied. ZnO thin film may be useful in heat mirror applications due to its spectral properties. ZnO thin films have also been identified as potential semiconductor materials for electronic applications.
Author(S) Details
J. I. Onwuemeka
Department of Physics, Imo State University, Owerri, Imo State, Nigeria.
F. C. Eze
Department of Physics, Federal University of Technology, Owerri, Imo State, Nigeria.
I. C. Ndukwe
Department of Physics, Federal University of Technology, Owerri, Imo State, Nigeria.
View Book:- https://stm.bookpi.org/CACS-V6/article/view/4353
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