Showing posts with label transmittance. Show all posts
Showing posts with label transmittance. Show all posts

Wednesday, 7 September 2022

Optical and Electrochromic Properties of Pure and Cu-Doped NiO Thin Films | Chapter 7 | New Frontiers in Physical Science Research Vol. 1

 At a substrate temperature of 350 oC, pure and copper-doped nickel oxide film was formed using a straightforward nebulizer approach on an ITO-coated glass substrate. With the help of a UV-Vis-NIR spectrometer and a cyclic voltammeter, researchers were able to determine how Cu content affected the optical and electrochromic characteristics of NiO film. The transmittance falls as the Cu concentration rises, and as a result, the band-gap energy falls from 3.32 eV to 2.78 eV. For samples with 0%, 5%, and 10% copper doping, the transmittance in both the bleached state and the coloured state was dramatically reduced.  


Author(s) Details:

V. Gowthami,
Department of Physics, School of Basic Sciences, Vels Institute of Science,Technology and Advanced Studies, Chennai-600 117, India.

M. Meenakshi,
Department of Physics, Dr. Umayal Ramanathan College for Women, Karaikudi-630 003, India.

C. Sanjeeviraja,
Department of Electronics and Communication Engineering, Alagappa Chettiar Government College of Engineering and Technology, Karaikudi-630 004, India.

Please see the link here: https://stm.bookpi.org/NFPSR-V1/article/view/8123

Saturday, 30 October 2021

Determination of Chemically Desposited ZnO Thin Films for Possible Device Applications | Chapter 07 | Challenges and Advances in Chemical Science Vol. 6

 Deposition and Characterization of ZnO Thin Films by Solution Growth Technique with Ammonia (NH3) as a Complexing Agent Solution growth approach was used to form zinc oxide thin films on glass slides at temperatures ranging from 60 to 100 degrees Celsius in a 1M NaOH solution. The films were proven to be ZnO thin films using X-ray fluorescence (XRF) and Rutherford Backscattering Spectroscopy (RBS) investigations. The optical transmittance of ZnO films ranged from 20.6 percent to 65.6 percent in the ultraviolet, 70.2 percent to 79.2 percent in the visible, and 79.5 percent to 81.6 percent in the near-infrared. The absorbance of ZnO films was reported to be 25.5 percent to 68.6% in the UV, 10% to 18.3% in the visible range, and 8.8 percent to 9.96 percent in the near-infrared region of the electromagnetic spectrum. Throughout the electromagnetic spectrum, ZnO thin films showed low reflectance (9.6 percent to 20.3 percent ). For ZnO thin films, direct band gap values of 3.31eV were found. The gravimetric approach was used to produce a thickness of 0.082m for ZnO films. The refractive index, optical conductivity, absorption coefficient, and dielectric constants were among the other parameters studied. ZnO thin film may be useful in heat mirror applications due to its spectral properties. ZnO thin films have also been identified as potential semiconductor materials for electronic applications.



Author(S) Details

J. I. Onwuemeka
Department of Physics, Imo State University, Owerri, Imo State, Nigeria.

F. C. Eze
Department of Physics, Federal University of Technology, Owerri, Imo State, Nigeria.

I. C. Ndukwe
Department of Physics, Federal University of Technology, Owerri, Imo State, Nigeria.

View Book:- https://stm.bookpi.org/CACS-V6/article/view/4353

Wednesday, 17 March 2021

Vanadium Dioxide Thin Films for Smart Windows: Numerical Study and Improvement of Their Optical Properties | Chapter 5 | Newest Updates in Physical Science Research Vol. 3

 Because of the reversible semiconductor-to-metal transition near room temperature, both monoclinic (M) and rutile (R) phase vanadium dioxide (VO2) has attracted considerable attention as a promising candidate for smart windows in recent years. This paper presents a numerical simulation of the optical properties of VO2 thin films, such as index of refraction, coefficient of extinction, reflectance, and transmittance. To do so, we used the Drude-Lorentz Model to measure coefficients at from the optical parameters n and k by determining the dielectric constant ɛ (w, T). Given that VO2 has a semiconductor-metal transition temperature of 68°C, we used transmittance simulations to investigate the effect of thickness on the optical properties of VO2 thin films. As a result, a major change in the optical properties of VO2 thin films has been discovered, which opens up a slew of new possibilities, especially for smart windows.

Author (s) Details

I. Derkaoui
University Sidi Mohammed Ben Abdellah, Faculty of Sciences Dhar el Mahraz, Laboratory of Solid state Physics, Group of Nanomaterials and Renewable Energies, P.O.Box 1796 Atlas Fez 30 000, Morocco and Africa Graphene Center, 2 Boekenhout Street, Florida, Johannesburg, 1709, South Africa.


M. Benkhali
University Sidi Mohammed Ben Abdellah, Faculty of Sciences Dhar el Mahraz, Laboratory of Solid state Physics, Group of Nanomaterials and Renewable Energies, P.O.Box 1796 Atlas Fez 30 000, Morocco.

Professor M. Khenfouch
Africa Graphene Center, 2 Boekenhout Street, Florida, Johannesburg, 1709, South Africa.


A. Rezzouk
University Sidi Mohammed Ben Abdellah, Faculty of Sciences Dhar el Mahraz, Laboratory of Solid state Physics, Group of Nanomaterials and Renewable Energies, P.O.Box 1796 Atlas Fez 30 000, Morocco.

View Book :- https://stm.bookpi.org/NUPSR-V3/article/view/573