Leakage Current Analysis in Mosfets Using Matlab GUI| Chapter 3 | Techniques and Innovation in Engineering Research Vol. 2

 In MOSFETs, leakage current has a mathematical expression. The mathematical expression is inherently complicated. Leakage current is influenced by a variety of factors. This chapter's goal is to examine how various parameters may affect the leakage current. When the input voltage is lower than the threshold voltage, the leakage current occurs. The minimum gate to source voltage necessary to switch on a MOSFET device is known as the threshold voltage. Subthreshold voltage is another name for the leakage current that occurs below the threshold voltage. The gate to source voltage, threshold voltage, drain to source voltage, oxide thickness, channel width, permittivity of the material, temperature, mobility of charge carriers, and subthreshold leakage current all affect it. These parameters are manipulated to see the impact of these parameters is presented through the graph in MATLAB GUI.

Author(s) Details:

Md. Masood Ahmad,
GITAM University, India.

D. Anitha,
GITAM University, India.

Please see the link here: https://stm.bookpi.org/TAIER-V2/article/view/8271

Threshold Voltage and Source to Body Voltage Analysis in Mosfets| Chapter 2 | Techniques and Innovation in Engineering Research Vol. 2

 The lowest voltage necessary to switch on a MOSFET device is known as the threshold voltage. The right body potential can be used to raise or lower the MOSFET threshold voltage. Body bias voltage is another name for the body voltage. This chapter examines several body biassing techniques. The effects of various body bias voltages on the MOSFET device's input and output properties are investigated. The 45nm channel length MOSFETs being investigated. This also goes by the name of 45nm Technology. Devices that use PMOS and NMOS are evaluated for body bias. The active body bias strategy is investigated. To raise the threshold voltage of the PMOS and NMOS devices, reverse body bias is investigated.

Author(s) Details:

Md. Masood Ahmad,
GITAM University, India.

D. Anitha,
GITAM University, India.

Please see the link here: https://stm.bookpi.org/TAIER-V2/article/view/8270

Operational Amplifier Architectures| Chapter 3 | Technological Innovation in Engineering Research Vol. 8

 Operational amplifiers are linear devices which have all the properties required for nearly ideal DC amplification. They are used extensively in signal conditioning, filtering or to perform mathematical operations such as add, subtract, integration and differentiation. Operational Amplifiers also have one output (although there are ones with an additional differential output) of low impedance that is referenced to a common ground terminal and it should ignore any common mode signals that is, if an identical signal is applied to both the inverting and non-inverting inputs there should no change to the output.

Author(s) Details:

D. Anitha,
ECE, Gitam University, India.

Md. Masood Ahmad,
ECE, Gitam University, India.

Please see the link here: https://stm.bookpi.org/TIER-V8/article/view/8250

Study on Design and Analysis of Ga2O3 Power MOSFETs with Source-field-plated | Chapter 4 | New Approaches in Engineering Research Vol. 16

 This work looks at the design and simulation of Ga2O3 power MOSFETs with source-field plating, as well as the breakdown voltage, interface oxide charges, and their relationship to the threshold voltage. A threshold voltage of -50 V is calculated for the device structure considered. This number is equivalent to reported experimental results with a similar device shape and physical parameters, where a simulation assumes an interface oxide charge density of 5 x1013 /cm2. When a channel doping density of 1.5 x 1016 cm-3 is utilised, simulation results show a breakdown voltage of 600 V and a Ron resistance of 40 mm for Ga2O3 n-MOSFETs. These findings are consistent with other researchers' measurements of electric field breakdown and Ron resistance.

Author(S) Details

H. Fardi
Department of Electrical Engineering, University of Colorado Denver, Colorado, USA.

View Book:- https://stm.bookpi.org/NAER-V16/article/view/4057

Research on Real Time Implementation of Fuzzy Based Buck Boost Converter Using LabVIEW | Chapter 6 | New Ideas Concerning Science and Technology Vol. 12

 Virtual instrumentation is characterised as the use of industry-standard computer technology to construct user-defined instrumentation systems by combining measurement and control hardware and software. Using LabVIEW, this paper proposes a two-input fuzzy logic controller (FLC) for buck boost converter output-voltage regulation. As two inputs to the controller, the output voltage has been used as a closed loop feedback to evaluate the output error (e) and the shift in error (e). The inductance and capacitor in the buck boost converter were chosen to ensure continuous operating mode (CCM) and low output voltage ripple. The FLC has a strong output voltage response when compared to the PID controller response, according to the experimental results. This study successfully demonstrated that LabVIEW and Fuzzy Logic controllers can be used to create a method for selecting controller modes.

Author (s) Details

M. Chelliah
Tamilnadu College of Engineering, Coimbatore, India.

C. Mari Muthu
Government College of Technology, Coimbatore, India.

View Book :- https://stm.bookpi.org/NICST-V12/article/view/776

Simulation and Design of Vertical Power MOSFETs utilizing Silvaco’s ATLASTM | Chapter 1 | Recent Developments in Engineering Research Vol.5

 

This paper reports on 3C-SiC low-doped drain power MOSFET design and simulation, including key parameters such as the model of avalanche effect ionisation and its relationship to breakdown voltage, the doping dependence of bulk mobility, and the relationship between on-resistance and breakdown voltage. While scaling the parasitic JFET, a number of MOSFETs were built with different blocking layer doping. To mitigate localised breakdown at the p-well / n-type drift layer interface, a stepped doping profile is used. Using a commercially available 2D simulation software, the characteristics of the MOSFETs were obtained. Comparisons made with a 1D analytical model indicate strong agreement between the on-state resistance, current-voltage characteristics, sub-threshold slope and the overall validity of the existing simulation models. As long as there is a proper inclusion of the body impact. Simulation results show that a 600 V, 3C-SiC MOSFET with a thinned substrate, containing a drift layer of 7 ⁇ m and a blocking layer doping density of 1x1016 cm-3, can have an on-state resistance of 0.8 mW-cm2 for the selected material parameters

Author (s) Details

Dr. Hamid Fardi
University of Colorado, Denver Colorado, 1200 Larimer Square, CO 80217-3364, USA.

View Book :- https://bp.bookpi.org/index.php/bpi/catalog/book/273