Research on Composite Stable to Corrosive Media in SiC-AL2O3-Si2ON2 System | Chapter 2 | Recent Developments in Engineering Research Vol.5

 The goal of the research was to study the composite obtained from silicon carbide, silicon and refractory clay mixture in an impure nitrogen medium. The chemical processes of burning of the aforementioned mixture in the technical nitrogen medium and the form of binder obtained, phase composition and basic properties are studied with X-ray diffraction, petrographic and electron microscope techniques. Composite silicon carbide with complex binder is documented to be obtained, the main stages being: Si2ON2, 3Al2O3·2SiO2 and SiO2. Composite SiC-Al2O3 has also been obtained and researched. Composite water and acid resistance (H2SO4, ~1.84 g / sm3) and non-ferrous metal and slag resistance are being studied. The composites obtained can be used for the development of thermocouple protective envelopes to measure the temperature of ferrous and nonferrous metals at high temperatures.

Author (s) Details

Z. D. Kovziridze
Department of Chemical and Biological Technologies, Georgian Technical University, Tbilisi, Georgia.

N. S. Nizharadze
Department of Chemical and Biological Technologies, Georgian Technical University, Tbilisi, Georgia.

G. Tabatadze
Department of Chemical and Biological Technologies, Georgian Technical University, Tbilisi, Georgia.

M. Mshvildadze
Department of Chemical and Biological Technologies, Georgian Technical University, Tbilisi, Georgia.

E. Nikoleishvili
Department of Chemical and Biological Technologies, Georgian Technical University, Tbilisi, Georgia.

Z. Mestvirishvili
Department of Chemical and Biological Technologies, Georgian Technical University, Tbilisi, Georgia.

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Simulation and Design of Vertical Power MOSFETs utilizing Silvaco’s ATLASTM | Chapter 1 | Recent Developments in Engineering Research Vol.5

 

This paper reports on 3C-SiC low-doped drain power MOSFET design and simulation, including key parameters such as the model of avalanche effect ionisation and its relationship to breakdown voltage, the doping dependence of bulk mobility, and the relationship between on-resistance and breakdown voltage. While scaling the parasitic JFET, a number of MOSFETs were built with different blocking layer doping. To mitigate localised breakdown at the p-well / n-type drift layer interface, a stepped doping profile is used. Using a commercially available 2D simulation software, the characteristics of the MOSFETs were obtained. Comparisons made with a 1D analytical model indicate strong agreement between the on-state resistance, current-voltage characteristics, sub-threshold slope and the overall validity of the existing simulation models. As long as there is a proper inclusion of the body impact. Simulation results show that a 600 V, 3C-SiC MOSFET with a thinned substrate, containing a drift layer of 7 ⁇ m and a blocking layer doping density of 1x1016 cm-3, can have an on-state resistance of 0.8 mW-cm2 for the selected material parameters

Author (s) Details

Dr. Hamid Fardi
University of Colorado, Denver Colorado, 1200 Larimer Square, CO 80217-3364, USA.

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