In MOSFETs, leakage current has a mathematical expression. The mathematical expression is inherently complicated. Leakage current is influenced by a variety of factors. This chapter's goal is to examine how various parameters may affect the leakage current. When the input voltage is lower than the threshold voltage, the leakage current occurs. The minimum gate to source voltage necessary to switch on a MOSFET device is known as the threshold voltage. Subthreshold voltage is another name for the leakage current that occurs below the threshold voltage. The gate to source voltage, threshold voltage, drain to source voltage, oxide thickness, channel width, permittivity of the material, temperature, mobility of charge carriers, and subthreshold leakage current all affect it. These parameters are manipulated to see the impact of these parameters is presented through the graph in MATLAB GUI.
Author(s) Details:
Md. Masood Ahmad,
GITAM University, India.
D. Anitha,
GITAM University, India.
Please see the link here: https://stm.bookpi.org/TAIER-V2/article/view/8271
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