The structural, morphological, and opto-electrical characteristics of cuprous oxide have been studied. Copper foil was thermally oxidised to produce premium cuprous oxide materials. High purity and large grain size cuprous oxide films were successfully produced using this technique. The films exhibit a cubic structure with a preferred (111) orientation at a 2 angle of 36.51o, according to the results of X-ray diffraction (XRD). The material is rough on a micro scale, with an average grain size of 0.68 micrometres, according to a scanning electron microscope (SEM) micrograph. Cu2O is thought to have an optical band gap energy of 2.11 eV. Cu2O was found to have a low electrical resistance of 2.59 x 102 cm. At steady illumination of 60Wm-2, the maximum power was found to be 1.84x10-4mWcm-2 for the cell without current collection grids and 2.61x10-4mWcm-2 for the cell with current collection grid. Efficiency and fill factors were determined to be 3.07x10-4%, 0.49, 4.35x10-4%, and 0.58 for cells with and without current collecting grids, respectively. Cuprous oxide is a suitable material for photovoltaic applications due to the aforementioned discoveries.
Author(s) Details:
S. M. Kurawa,
Department of Physics, Sa’adatu Rimi College of Education, Kumbotso, Kano, Nigeria.
A. O. Musa,
Department of Physics, Bayero University, Kano, Nigeria.
Y. I. Bunkure,
Department of Science and Technology Education, Bayero University, Kano, Nigeria.
T. H. Darma,
Department of Electrical and Electronic Engineering, Faculty of Engineering, Universiti Putra, Malaysia.
R. S. Getso,
Department of Physics, Sa’adatu Rimi College of Education, Kumbotso, Kano, Nigeria.
S. Shafie,
Department of Electrical and Electronic Engineering, Faculty of Engineering, Universiti Putra, Malaysia.
S. Faruk,
Department of Physics, Usmanu Danfodiyo University, Sokoto, Nigeria.
Please see the link here: https://stm.bookpi.org/COSTR-V3/article/view/8163
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