The graphitic carbon nitride (g-C3N4) has
attracted significant cross-disciplinary interest in the fields of
photocatalysis, optoelectronic devices, biomedicines, and other areas as a
free-metal, non-toxic, earth-abundant, and environmentally friendly
narrow-bandgap dimensional semiconductor with visible light response.
Additionally, g-distinct C3N4's crystal and electronic structure gives it adjustable
luminescence, extremely high chemical stability, and excellent thermal
stability. However, understanding g-crystal C3N4's and electronic structures is
essential for optimising performance for various applications and for
understanding the mechanisms behind the material's features. This paper
provides an overview of the g-C3N4 crystal and electrical structures, defects
detection, and band structure rules. Additionally, the structure of
g-progression C3N4's from small molecular precursors to macroscopic compounds,
including synthesis methods and reaction conditions on intermediate and final
product structures and performances.
Author(s) Details:
Lei Chen,
School of Materials Science and Engineering, Hefei University of
Technology, Hefei 230009, China.
Guifang Zheng,
School of Materials Science and Engineering, Hefei University of Technology,
Hefei 230009, China.
Yabing Wu,
School of Materials Science and Engineering, Hefei University of Technology,
Hefei 230009, China.
Pingjuan Zhang,
College of Electrical and Electronic Engineering, Anhui Science and Technology
University, Bengbu 233030, China.
Please see the link here: https://stm.bookpi.org/CTCB-V4/article/view/7809
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