Effects of Nitrogen and Bismuth on GaAs Semiconductor | Chapter 3 | New Trends in Physical Science Research Vol.7

 

 To ascertain the impact of Nitrogen (N) and Bismuth (Bi) on GaAs semiconductor, we applied the first-principles technique to explore the structural and electronic features of the ternary semiconductor alloy GaAs1-xNx and GaAs1-xBix. We applied the pseudopotential method and Density Functional Theory to the Generalized Gradient Approximations and Local Density Approximations. The Zinc-Blende phase has been discovered to be stable for GaAsN and GaAsBi alloys. This paper investigates the impact of nitrogen concentration in GaAsN alloys and bismuth content in GaAsBi alloys on bending characteristics. The bending parameter of GaAsBi and GaAsN alloys, which is significant for a wide range of device applications, was used to compute the bandgap energies for all x concentrations (0 x 1) and the lattice constant of both alloys.

Author(s) Details:

M. Aslan,
Department of Physics, Sakarya University, Esentepe Campus, Serdivan, 54187, Turkey.

Battal G. Yalcin,
Department of Physics, Sakarya University, Esentepe Campus, Serdivan, 54187, Turkey.

Please see the link here: https://stm.bookpi.org/NTPSR-V7/article/view/7779