Growth of Mo-doped ZnO (MZO) Films by Chemical Spray Process | Chapter 5 | Chemical and Materials Sciences - Developments and Innovations Vol. 3

 

The present study report on the growth of Mo-doped ZnO (MZO) films by chemical spray process and the results on film characterization. Using the spray pyrolysis method, molybdenum (Mo)-doped zinc oxide (ZnO) thin films were produced on corning 7059 glass substrates. The layers were deposited with the Mo-doping constant set at 2 at. % for a range of solution concentrations from 0.01M to 0.2M.  The change in properties of the films by varying Zn molarity was studied. X-ray diffraction studies showed polycrystalline nature of the films with (002) preferred orientation and exhibited wurtzite structure. The layers formed at 0.1M molar concentration exhibited better crystallinity compared to other layers. Raman studies are in good agreement with XRD. Surface morphology varied significantly with Zn-molar concentration. An average transmittance of the layers was 80% in the visible region and the band gap varied from 3.31 eV to 3.5 eV. The detailed analysis of the results including photoluminescence are reported and discussed. The optical results identified that films with 0.1M concentration showed optical transmittance of 80% in the visible region and the energy band gap varied between 3.31eV to 3.5eV. The photoluminescence data supported the change in band gap with solution concentration. These crystalline, single phase and transmissive Mo-doped ZnO layers could be used as window layers in solar cells.

 

 

Author(s) Details

 

T. Sreenivasulu Reddy

Department of Physics, Viswam Engineering College, Madanapalle – 517325, India.

N. Revathi

Department of Physics, Dayananda Sagar Academy of Technology & Managment, Banglore – 560082, India.

K. T. Ramakrishna Reddy

Department of Physics, Solar Energy Laboratory, Sri Venkateswara University, Tirupati - 517 502, India.

 

Please see the link:- https://doi.org/10.9734/bpi/cmsdi/v3/791

Optoelectronic and Nanomechanical Properties of Sputtered Cu3 | Chapter 10 | Chemical and Materials Sciences: Research Findings Vol. 4

 

The pursuit of efficient, profitable, and eco-friendly materials is one of the undisputed pillars of optoelectronic devices research from its inception to the present day. Some materials, such as copper nitride (Cu3N), show great promise for promoting sustainable technologies. Cu₃N is a metastable semiconductor, as it decomposes into metallic copper (Cu) and nitrogen (N) when heated above 300 °C. This chapter presents the fabrication of Cu3N by reactive radio-frequency magnetron sputtering using a pure nitrogen (N2) environment to achieve quality Cu3N thin films. The film-deposition process was carried out using a single-chamber sputtering system from MVSystem LLC (Golden, CO, USA). Both substrate temperature and gas working pressure are evaluated to determine their impact on the optoelectronic properties. The aim is to highlight the absorption capability and the nanomechanical properties of that nitride binary compound. Several characterisation techniques, including X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS), Raman spectroscopy, scanning electron microscopy (SEM), nanoindentation, and photothermal deflection spectroscopy (PDS), are used for such purposes. The results indicate the importance of both the substrate temperature and the working pressures to achieve a close to stoichiometric Cu3N material (Cu/N ratio ≈ 3) with the (100) plane as preferred orientation. Such stoichiometry begins to decrease as the substrate temperature increases. This demonstrates the clear influence of these sputtering deposition conditions. This fact is attributed to the nitrogen re-emission that happens at high substrate temperatures. In addition, Raman microscopy confirms the formation of the Cu-N bonds within the 628-637 cm−1 range. On the other hand, both the substrate temperature and the working pressure significantly influence the film hardness and the grain size, thus affecting the elastic modulus. Optical properties reveal tunable band gap energies, refractive indexes and Urbach energies as functions of the deposition parameters. These findings underscore the potential of Cu3N thin films in sputtering different energy applications such as photovoltaic, photodetectors and even hydrogen storage. This is mainly due to the tunable and advantageous properties of Cu3N and its resilience against defects. It can be considered that this research may pave the way for future advances in efficient and sustainable energy technologies.

 

Author(s) Details

María Isabel Rodríguez-Tapiador
Departamento de Energía, Centro de Investigaciones Energéticas, Medioambientales y Tecnológicas (CIEMAT), Madrid 28040, Spain and Universidad Rey Juan Carlos, Área de Ciencia e Ingeniería de Materiales, Tulipán, s/n, 28933 Móstoles, Spain.

 

Nuria Gordillo
Centro de Microanálisis de Materiales (CMAM), Universidad Autónoma de Madrid, 28049 Madrid, Spain, Departamento de Física Aplicada, Universidad Autónoma de Madrid, 28049 Madrid, Spain and Instituto Nicolás Cabrera, Universidad Autónoma de Madrid, 28049 Madrid, Spain.

 

Alberto Jiménez-Suarez
Universidad Rey Juan Carlos, Área de Ciencia e Ingeniería de Materiales, Tulipán, s/n, 28933 Móstoles, Spain.

 

José Miguel Asensi
Departament de Física Aplicada, Universitat de Barcelona, Barcelona, Spain.

 

Fernando Bernabé Naranjo
Grupo de Ingeniería Fotónica (GRIFO), Departamento de Electrónica, Escuela Politécnica Superior, Universidad de Alcalá. Campus Universitario, 28871 Alcalá de Henares, Madrid, Spain.

 

Elisabetta Carella
Departamento de Energía, División de Tecnología de Fusión, Centro de Investigaciones Energéticas, Medioambientales y Tecnológicas (CIEMAT), Madrid 28040, Spain.

 

Marta Malo
Departamento de Energía, División de Tecnología de Fusión, Centro de Investigaciones Energéticas, Medioambientales y Tecnológicas (CIEMAT), Madrid 28040, Spain.

 

Susana Fernández
Departamento de Energía, Centro de Investigaciones Energéticas, Medioambientales y Tecnológicas (CIEMAT), Madrid 28040, Spain.

 

Please see the book here:- https://doi.org/10.9734/bpi/cmsrf/v4/5679

Pulse Electrodeposited AgGaSe₂ Thin Films: Synthesis, Optical Properties, and Applications in Optoelectronic Devices | Chapter 11 | Innovative Solutions: A Systematic Approach towards Sustainable Future

In this work, we have used pulse electro deposition technique for the synthesis of AgGaSe2 thin films. At room temperature, AgGaSe₂ thin films were deposited using a bath containing Analar grade 10 mm silver nitrate, 10 mm gallium nitrate and 10 mm SeO₂ onto Tin oxide coated glass substrates (5.0 ohms/sq). The potential for the deposition was maintained at -0.68 V (SCE). The varied Duty cycle was kept in the range of 6–50 %. Determination of the optical constants such as absorption coefficient, refractive index, extinction coefficient, optical conductivity and dielectric constant in the wavelength range from 500nm to 1400nm has been evaluated. Further, in terms of single oscillator model of free carrier absorption normal dispersion of the refractive index has been analyzed to estimate the dispersion and oscillation energy. The lattice dielectric constant, the ratio of free carrier concentration to free carrier effective mass and relaxation time have been determined.

 

Author (s) Details

S Kalaiselvi
Department of Physics, AMC Engineering College, Bangalore-83, Karnataka, India.

Roopa V
Department of Physics, AMC Engineering College, Bangalore-83, Karnataka, India.

 

Please see the book here:- https://doi.org/10.9734/bpi/mono/978-93-49238-47-3/CH11

Unveiling Structural, Optical and Magnetic Properties of GaMnSb Thin Films |Chapter 10 | Science and Technology - Recent Updates and Future Prospects Vol. 6

In this study, we investigated the structural, optical, and magnetic properties of GaSbMn thin films fabricated via magnetron sputtering on a glass substrate. To introduce Mn into the GaSb matrix at low concentrations, the substrate temperatures were varied from 200 °C to 400 °C. The X-ray results show that the thin films are polycrystalline with a preferential orientation in the (220) direction of GaSb. accompanied by a secondary phase of MnSb. Raman spectroscopy revealed the presence of vibrational phonon modes of GaSb and a Coupled LO-Phonon-Plasmon Mode (CLOPM). The carrier concentration, derived from ωₚ, ranged from approximately 10¹⁸ to 10¹⁹ cm⁻³. The magnetization behavior was studied using temperature cycling (H fixed) and field cycling measurements (T fixed). The magnetization loops at room temperature show that Mn-doped GaSb films exhibit weak magnetic behavior. The Curie temperature, T_C, was determined from the magnetization vs. temperature curves. T_C takes high values in the range of 300 K to 570 K, which is related to the formation of Mn_xSb_y nanoparticles embedded into the GaSb matrix.

Aims: In this work, we studied the influence of Mn content on GaSb thin films deposited by magnetron R.F. sputtering. To this end, the structural, morphological, optical, and magnetic properties were analyzed and correlated with the experimental conditions.

Study Design: Experimental and theoretical study.

Place and Duration of Study: Laboratorio de Nanoestructuras Semiconductoras, Departamento de Física y Química, Universidad Nacional de Colombia, sede Manizales, Manizales - Colombia, between January 2021 and February 2022.

Methodology: GaSbMn thin films were fabricated using a non-epitaxial growth method, specifically magnetron sputtering, with variations in growth temperature. To study the morphological, structural, optical, and magnetic properties and to correlate these with the experimental conditions, X-ray diffraction, EDS-SEM, Raman spectroscopy, and magnetization measurements were carried out.

Results: GaSbMn thin films exhibit intriguing paramagnetic properties that are contingent upon experimental parameters. Through structural analysis, we identified the formation of Mn_xSb_y nanoparticles embedded within the GaSb matrix. The observed MnSb-like phonon modes at 242 cm^-1 (LVM), 251 cm^-1 (TO), and 264 cm^-1 (LO) align well with the reported vibrational modes of MnSb documented in the literature. Estimating a hole density of approximately 10¹⁹ cm^-3 from the CLOPM frequency (ω_p) in Raman spectroscopy further supports our findings. The Mn2Sb phase predominantly contributes to magnetization at elevated temperatures. Utilizing the mean-field model, we can compute the mean potential resulting from dipolar interactions between any pair of moments μ_i and μ_j at a distance r_ij.

Conclusion: GaAsMn thin films exhibit notable magnetic properties that vary with the growth conditions. Long-range interactions among isolated magnetic moments were analyzed using the mean-field model, demonstrating that the dipolar interaction field is influenced by the growth temperature. The high Curie temperatures observed in the samples are attributed to the presence of the Mn_1+xSb phase.

 

Author (s) Details

Camilo. A. Pulzara-Mora
Laboratorio de Nanoestructuras Semiconductoras, Facultad de Ciencias Exactas y Naturales, Universidad Nacional de Colombia, sede Manizales, Manizales, Caldas, Colombia.

 

José Doria-Andrade
Laboratorio de Materialografia, Facultad de Ingeniería, Institución Universitaria Pascual Bravo, Medellín, Colombia.

 

Andres Rosales-Rivera
Laboratorio de Magnetismo y Materiales Avanzados, Facultad de Ciencias Exactas y Naturales, Universidad Nacional de Colombia, Sede Manizales, Manizales, Caldas, Colombia.

 

Álvaro Pulzara-Mora
Laboratorio de Nanoestructuras Semiconductoras, Facultad de Ciencias Exactas y Naturales, Universidad Nacional de Colombia, sede Manizales, Manizales, Caldas, Colombia.

 

Please see the book here:- https://doi.org/10.9734/bpi/strufp/v6/1058

Growth of Mo-doped ZnO (MZO) Films by Chemical Spray Process | Chapter 5 | Chemical and Materials Sciences - Developments and Innovations Vol. 3

 The present study report on the growth of Mo-doped ZnO (MZO) films by chemical spray process and the results on film characterization. Using the spray pyrolysis method, molybdenum (Mo)-doped zinc oxide (ZnO) thin films were produced on corning 7059 glass substrates. The layers were deposited with the Mo-doping constant set at 2 at. % for a range of solution concentrations from 0.01M to 0.2M.  The change in properties of the films by varying Zn molarity was studied. X-ray diffraction studies showed polycrystalline nature of the films with (002) preferred orientation and exhibited wurtzite structure. The layers formed at 0.1M molar concentration exhibited better crystallinity compared to other layers. Raman studies are in good agreement with XRD. Surface morphology varied significantly with Zn-molar concentration. An average transmittance of the layers was 80% in the visible region and the band gap varied from 3.31 eV to 3.5 eV. The detailed analysis of the results including photoluminescence are reported and discussed. The optical results identified that films with 0.1M concentration showed optical transmittance of 80% in the visible region and the energy band gap varied between 3.31eV to 3.5eV. The photoluminescence data supported the change in band gap with solution concentration. These crystalline, single phase and transmissive Mo-doped ZnO layers could be used as window layers in solar cells.

 

Author (s) Details

 

Dr. T. Sreenivasulu Reddy,
Department of Physics, Viswam Engineering College, Madanapalle – 517325, India.

 

Dr. N. Revathi,
Department of Physics, Dayananda Sagar Academy of Technology & Managment, Banglore – 560082, India.

 

Dr. K. T. Ramakrishna Reddy,
Department of Physics, Solar Energy Laboratory, Sri Venkateswara University, Tirupati - 517 502, India.

 

Please see the book here:-  https://doi.org/10.9734/bpi/cmsdi/v3/791

XRD, XPS and Dynamic SIMS Analyses of p-Type Zinc Oxynitride Thin Films Deposited on Silicon Wafers by MOCVD | Chapter 5 | Fundamental Research and Application of Physical Science Vol. 6

 The present study proposed to determine the XRD, XPS and Dynamic SIMS studies of p-Type Zinc Oxynitride Thin Films Deposited on Silicon Wafers by MOCVD. Zinc oxide thin film is a available material for several hard state applications on account of its many favourable properties. Bis(glycinato-N,O) metallic mineral precursor was combined and used to deposit zinc oxynitride thin films on SiO2 substrates at 390°C and 420°C individually, using the metalorganic synthetic vapour deposition (MOCVD) method. The thin films produced were distinguished with vehement probe, x-ray diffractometry (XRD), radioactivity photoelectron spectroscopy (XPS) and dynamic subordinate ion mass spectroscopy (SIMS). Thin-film technology plays an main role that admits deposition of very thin tiers (from a few nanometres just before the angstrom level) of semiconductor material on a supporting substrate. The happening material exhibits novel mechanical, synthetic, optical and energetic properties accompanying the reduction in capacity to the nanometre scale, which is the result of surface and quantum imprisonment effects. The vehement probe tests showed that the thin films had p-type generated power. XRD spectra of the films present poorly defined peaks, meaning blurred crystallinity. The XPS reasonings revealed the occupancy of Zn, O and N peaks, with the thin films located at 390°C having taller N-doping level than those located at 420°C. Results of destructive layer reasonings conducted all the while dynamic SIMS tests on the films were unsatisfactory. The results show that lower deposition hotnesses using the forerunner may be chosen to higher hotnesses even though the thin films were very thin. Optics and dependable state electronics manage both use the p-type zinc oxynitride.

Author(s) Details:

U. S. Mbamara,
Department of Physics, Federal University of Technology, Owerri, Nigeria.

Please see the link here: https://stm.bookpi.org/FRAPS-V6/article/view/10831

Evaluating the Performance of ZnO Based Rare Earth Element Doped Thin Films | Chapter 10 | Recent Progress in Chemical Science Research Vol. 6

 In DMS fabrics, magnetic ions replace a very short end of the deal of the host semiconductor cation. We selected the understandable ZnO, which has a bandgap of 3.3 eV at ambient hotness, as the semiconducting host. Studies on 3d transition mineral-doped ZnO showed that the attractive moments were completely tiny. We looked into ZnO thin films drugged with group of chemical elements (RE) metal ions in light of more current Gd in GaN studies that showed big magnetic moments. The 3d electrons in change metals are exterior and delocalized, resulting in forceful direct exchange interactions and high Curie hotnesses, but the orbital push is often zero, developing in small total drawing moments per atom. The 4f electrons are localised concerning metals, and exchange interactions are roundabout, via 5d or 6s conduction electrons, but the exalted orbital impetus leads to high total magnetic importance per atom, such as 3.27µB for Nd. Nd has a Curie point of 19 K. The judgments of our investigation into Nd-drugged ZnO films are presented in this work. In order to discover more about the energetic characteristics of films, hall calculations are used. Here, we fashioned and examined ZnO films doped accompanying various Nd concentrations. On a-plane Al2O3 or SiO2 substrates, the films are mature. Hall investigations of electrical characteristics revealed the ghost of a degenerate, highly conducting, film–substrate connect layer for the films mature on Al2O3; such an effect can be prevented, for example, by utilizing SiO2 substrates. No anomalous Hall effect was seen in the magnetotransport experiments, but skilled was a strong negative magneto fighting ratio, which maybe explained for one system's paramagnetic reaction to the used magnetic field. We be going to keep using surface-delicate methods to try the magnetic characteristics of ZnO:RE thin films.

Author(s) Details:

Manish Sharma,
A. P. Physics, Government P.G. College Nagrota Bagwan District Kangra Himachal Pradesh 176047, India.

Please see the link here: https://stm.bookpi.org/RPCSR-V6/article/view/9364

Atomic Force Microscopy Characterization of Thin Films: A Review| Chapter 9 | New Frontiers in Physical Science Research Vol. 5

 Metal chalcogenide films have fascinated excellent attention by way of their singular physical, ocular, and energetic characteristics. The obtained films displayed wonderful absorption cooperative, direct band breach and good transparency in the seeable portion. Therefore, these matters maybe used in ocular bows, opto-electronic designs, cosmic containers, radiation detectors, visual modulators and shade resembling such a color detector. In this work, the terrain of the able films was intentional using tiny force microscopy method based on picked article review. The findings marked that the morphologies of the surface forms of thin films change with the dethroning methods and experimental environments.

Author(s) Details:

Ho Soon Min,
Faculty of Health and Life Sciences, INTI International University, Putra Nilai, 71800, Negeri Sembilan, Malaysia.

Please see the link here: https://stm.bookpi.org/NFPSR-V5/article/view/8971

Scanning Electron Microscopy Analysis of Thin Films: A Review| Chapter 2 | Research Aspects in Chemical and Materials Sciences Vol. 5

 Thin films possibly used in solar cell, indication of light devices, ocular waveguides, optoelectronic ploys and temperature sensors. These films were deposited taking advantage of various methods to some extent sputtering, chemical generally deposition system, electro dethroning method, pulsed indication of light deposition, vacuum separation, thermal evaporation, spray pyrolysis, e-beam separation, chemical mist dethroning and spin coating method. Characterization of the received films could be studied through picture of inside a body photoelectron spectroscopy, x-ray dissemination, Raman spectrometry, Rutherford Backscattering spectrometry, tiny force microscopy, UV-Visible spectroscopy, transmission capacity microscopy, scanning electron microscopy (SEM) and substance dispersive X-ray analysis. The SEM technique hold produce images by scanning the surface of the samples following focused energized matter beam. These electrons must communicate with atoms (in the inclined films), produce various signals, contained very main facts such as surface terrain and arrangement. The SEM keep reach resolution better than 1 nanometer, and the samples could be discovered indifferent environments (extreme emptiness, low emptiness or wet environments). In this work, the semantic of the prepared films was stated established the selected research review. It was shown that seed amount, thickness and grain shape authority depended on the distinguishing environments.

Author(s) Details:

Ho Soon Min,
Faculty of Health and Life Sciences, INTI International University Putra Nilai, 71800, Nilai, Negeri Sembilan, Malaysia.

Please see the link here: https://stm.bookpi.org/RACMS-V5/article/view/8895

Investigation of Optical Properties of Thin Films by Means of UV-visible Spectrophotometer: A Review| Chapter 5 | New Frontiers in Physical Science Research Vol. 5

 Thin films have existed synthesized using various deposition orders such as chemical usually deposition, vacuum dissolution, thermal dissolution, sputtering, hydrothermal, dip coating arrangement and pulsed laser dethroning. In this work, UV-visible spectrophotometer method was employed to study the optical features and band gap of the obtained thin films. UV-seeable spectrophotometer technique has many benefits such as rapidly study ability, cost effective, flexible and simple to use. This method measures the absorption or transmission of light that pass through the samples as a function of wavelength. The band gap was about 1.5 eV, doubled the solar range.

Author(s) Details:

Ho Soonmin,
Faculty of Health and Life Sciences, INTI International University, Putra Nilai, 71800, Negeri Sembilan, Malaysia.

Please see the link here: https://stm.bookpi.org/NFPSR-V5/article/view/8857

Applications of Transmission Electron Microscopy Technique to Thin Film Studies: Review| Chapter 4 | New Frontiers in Physical Science Research Vol. 5

 There are two ordinary deposition methods, that is to say chemical deposition pattern and physical deposition method could be used to produce thin films. The structure, makeup, optical, compositional and electrical characteristics of the obtained films were studied utilizing atomic force microscopy, scanning energized matter microscopy, UV-visible spectrophotometer, x-ray dissemination, energy dispersive x-ray study, scanning probe microscopy, photoluminescence spectroscopy, radioactivity fluorescence, x-ray photoelectron spectroscopy and Raman spectroscopy. Transmission power microscopy technique was used to investigate the clear structure, crystal introduction, grain size and time of crystalline materials. In this work, the arrangement of thin films using various types of dethroning methods was reported. In addition, the characteristics of the obtained films were studied utilizing transmission electron microscopy method based on selected information review. Experimental results confirmed that film deposition process can powerfully affect the crystal construction, crystallite size and phase of lucid.

Author(s) Details:

Ho Soonmin,
Faculty of Health and Life Sciences, INTI International University, Putra Nilai - 71800, Negeri Sembilan, Malaysia.

Please see the link here: https://stm.bookpi.org/NFPSR-V5/article/view/8856

Thin Film Studies by Energy Dispersive X-Ray Analysis Technique: Review| Chapter 2 | New Frontiers in Physical Science Research Vol. 5

 Metal chalcogenide thin films have fascinated the attention of many scientists by way of unique ocular, physical and electric features. Characterization of the prepared films has existed carried out by using various tools. In this work, strength dispersive X-ray analysis (EDX) was used to investigate the compositional of samples. The EDX analyst was equipped accompanying the scanning electron microscopy for fast identification of source. Experimental results displayed that the presence of various elements in particular sample was contingent upon the experimental environments. Research findings also emphasize different stoichiometric characteristics could be observed in the as-located film and annealed samples. The samples prepared under optimum compositional ratios showed better semantic and structural presence.

Author(s) Details:

Ho Soonmin,
Faculty of Health and Life Sciences, INTI International University, Putra Nilai-71800, Negeri Sembilan, Malaysia.

Please see the link here: https://stm.bookpi.org/NFPSR-V5/article/view/8854

Metal Telluride Thin Films: Advances in Research and Development| Chapter 9 | Research Aspects in Chemical and Materials Sciences Vol. 4

 Metal telluride thin films have intrigued great attention on account of unique properties to a degree high absorption cooperative, direct band gap value and good transparence in the visible region. These films maybe employed in solar containers, radiation detectors, electro-optic modulators, color of blood detector, ocular windows and opto-electronic tools. In this work, preparation and characterization of mineral telluride films were reported based on the picked literature review. X-ray diffraction method, atomic force microscopy and scanning power microscopy method could be used to decide the structure and morphology of the acquired films, respectively. The band gap and ocular properties were measured utilizing UV-visible spectrophotometry. The obtained band break suitable to cope with the maximum of cosmic spectrum.

Author(s) Details:

Ho Soon Min,
Faculty of Health and Life Sciences, INTI International University, Putra Nilai, 71800, Negeri Sembilan, Malaysia.

Please see the link here: https://stm.bookpi.org/RACMS-V4/article/view/8698

The Influence of pH on the Properties of SILAR Deposited Cobalt Selenide Films| Chapter 6 | Research Aspects in Chemical and Materials Sciences Vol. 4

 The following ionic layer adsorption and response method (SILAR) has existed used for the growth of miscellaneous types of thin films. Because of this method has various advantages such as cheap, simple method, can control film thickness and low hotness production. In this work, twofold compound such as cobalt selenide thin films have happened produced by utilizing SILAR method under different pH principles. The structure, surface morphology and ocular properties of the acquired films have been studied by utilizing the X-ray diffraction (XRD), field issuance scanning electron microscope (FESEM) and ultraviolet seeable spectrophotometer. XRD data designated a cubic structure. Based on the FESEM reasoning, grain intensity increased when the pH was increased (pH 2 to pH 4). The band break was found in the range of 2 eV to 2.5 eV.

Author(s) Details:

Ho Soonmin,
Faculty of Health and Life Sciences, INTI International University Putra Nilai, Negeri Sembilan, Malaysia.

Please see the link here: https://stm.bookpi.org/RACMS-V4/article/view/8693

Comprehensive Characterization of Nitrogen-Doped Zinc Oxide Thin Films Produced by Metalorganic Chemical Vapour Deposition (MOCVD) | Book Publisher International

 This study proposed to produce nitrogen doped metallic mineral oxide thin films from a low and easily reproducible forerunner. This was with a view to specify an effective link for the result of nitrogen doped metallic mineral oxide thin films that will be suitable for miscellaneous technological requests.The raw materials for the forerunner were zinc acetate and ammonium acetate. The forerunner was created from the two compounds in magnitudes (ammonium acetate to zinc acetate) of 1:9 (10%), 2:8 (20%), 3:7 (30%) and 4:6 (40%), and named as Samples B1, B2, B3 and B4 respectively. The formulations were treated powder-dry and each sample was cracked in MOCVD dethroning chamber to deposit ZnO thin films on jug substrates successfully at 420°C. The active pressure was atmospheric while compacted air was used as the one who carries or transmits something gas accompanying a flow rate of 2.5 dm3/min. The ZnO thin films located were characterized to catch their optical, fundamental, compositional and electrical possessions and surface morphology.The ocular characterization demonstrated that all the deposited thin films were over 80% see-through to the visible spectrum. Sample B1 had peak travel of 95.0% at 785nm wavelength, B2 had 96.7% peak at 970nm, B3 had 99.0% peak at 1040nm, and B4 had 93% peak at 1090nm. The ocular measurements again gave the strength bandgap of 3.27eV for Samples B2 and B3, and 3.31eV for Samples B1 and B4. The x-ray dissemination studies showed that the located thin films were amorphous, and present poorly defined peaks at 2θ=32.9° for Samples B1, B2 and B4 and at 2θ=30.6° for Sample B3. RBS calculations gave a somewhat constant (average) percentage for the three identified pieces in the thin films (zinc : oxygen : nitrogen) as 4.4 : 3.7 : 1. Thicknesses acquired through the RBS were 14.43μm for B1, 58.72μm for B2, 52.28μm for B3, and 36.09μm for B4. The sheet resistivity act the high side, but reduced a bit piercingly from B1 to B2, gradually from B2 to B3, and much more piercingly from B3 to B4. The values were 1.53 x 109 Ω/sq. for B1, 1.10 x 109 Ω/sq. for B2, 1.00 x 109 Ω/sq. for B3, and 8.00 x 107 Ω/sq. for B4. The micrographs presented extensively joined clusters of grains with few (nitrogen) gas bubbles on few of the surfaces.This study concluded that the forerunner produced maybe used to deposit doped metallic mineral oxide thin films that could again be useful in dependable state scheme fabrication, smoke sensors and anti-reflectors.

Author(s) Details:

Uchenna Sydney Mbamara,
Department of Physics, Federal University of Technology, Owerri, Imo State, Nigeria.

Please see the link here: https://stm.bookpi.org/CCNDZOTFPMCVD/article/view/8655

Laser Synthesis of Nanometric Chromium Oxide Films with High Seebeck Coefficient and High Thermoelectric Figure of Merit: An Experimental Study | Chapter 1 | Current Overview on Science and Technology Research Vol. 4

 Utilizing ultraviolet photons from a KrF- laser ( = 248 nm), nanometric chromium oxide sheets of varying thickness, stoichiometry, and electrical properties were created. For the synthesis, reactive pulsed laser deposition (RPLD) was used as the foundation (RPLD). Film deposition was carried out between 293 and 800 K on a 100>Si substrate. XRD measurements show that films deposited on a Si substrate exhibit polycrystalline structure. All films demonstrated semiconductor temperature behaviour with a changeable band gap (Eg) less than 1.0 eV, depending on the substrate temperature, oxygen pressure in the reactor, and film thickness. It was investigated how the oxygen pressure, substrate temperature, and laser pulse frequency related to film thickness (55–200 nm). It was discovered that the ideal thermoelectric figure of merit (ZT) in the region of (280-330 K) was high as 0.23-5.0 and the ideal thermal electromotive force coefficient (Seebeck coefficient, S) was high as (3.0-8.0) mV/K. This made the UV-based RPLD technique used to make Cr3-XO3-Y nanometric films a very strong candidate for effective thermo-sensors and thermo-converters functioning at moderate temperatures. As a result, the primary goal of the research presented in this study is to identify the prerequisites for improving the thermoelectric properties of nanometric chromium oxide films.

Author(s) Details:

N. Stefan,
National Institute for Laser, Plasma and Radiation Physics, P.O. Box MG-54, RO-77125, Magurele, Romania.

S. A. Mulenko,
G.V. Kurdyumov Institute for Metal Physics NAS of Ukraine, 36, Vernadsky Blvd, Kyiv UA-03142, Ukraine.

N. T. Gorbachuk,
Kiev State University of Technology and Design, Kyiv UA-03011, Ukraine.

Please see the link here: https://stm.bookpi.org/COSTR-V4/article/view/8279

Determining the Relationship between Corporate Social Responsibility and Company Profitability in Zimbabwe: A Case of a Listed Telecommunication Company | Chapter 4 | Current Aspects in Business, Economics and Finance Vol. 4

 Utilizing ultraviolet photons from a KrF- laser ( = 248 nm), nanometric chromium oxide sheets of varying thickness, stoichiometry, and electrical properties were created. For the synthesis, reactive pulsed laser deposition (RPLD) was used as the foundation (RPLD). Film deposition was carried out between 293 and 800 K on a 100>Si substrate. XRD measurements show that films deposited on a Si substrate exhibit polycrystalline structure. All films demonstrated semiconductor temperature behaviour with a changeable band gap (Eg) less than 1.0 eV, depending on the substrate temperature, oxygen pressure in the reactor, and film thickness. It was investigated how the oxygen pressure, substrate temperature, and laser pulse frequency related to film thickness (55–200 nm). It was discovered that the ideal thermoelectric figure of merit (ZT) in the region of (280-330 K) was high as 0.23-5.0 and the ideal thermal electromotive force coefficient (Seebeck coefficient, S) was high as (3.0-8.0) mV/K. This made the UV-based RPLD technique used to make Cr3-XO3-Y nanometric films a very strong candidate for effective thermo-sensors and thermo-converters functioning at moderate temperatures. As a result, the primary goal of the research presented in this study is to identify the prerequisites for improving the thermoelectric properties of nanometric chromium oxide films.

Author(s) Details:

N. Stefan,
National Institute for Laser, Plasma and Radiation Physics, P.O. Box MG-54, RO-77125, Magurele, Romania.

S. A. Mulenko,
G.V. Kurdyumov Institute for Metal Physics NAS of Ukraine, 36, Vernadsky Blvd, Kyiv UA-03142, Ukraine.

N. T. Gorbachuk,
Kiev State University of Technology and Design, Kyiv UA-03011, Ukraine.

Please see the link here: https://stm.bookpi.org/COSTR-V4/article/view/8279

Metal Oxide Thin Films Used as Solar Absorbers: Review| Chapter 1 | Progress in Chemical Science Research Vol. 1

Metal oxide materials are gaining popularity due to their remarkable physical, optical, and electrical qualities. Laser devices, supercapacitors, solar cells, biosensors, biomedicine, photo catalysis, and luminous materials are just a few of the uses for these thin films. Many scientists have documented the synthesis of metal oxide films utilising various deposition processes such as physical and chemical approaches. Characterization is a crucial step in ensuring that the thin films produced can be utilised for certain applications. Based on a literature study, the major goal of this work is to report on the creation or improvement of thin film based solar cells, perovskite solar cells, and dye sensitised solar cells. The photovoltaic properties (short-circuit current, open-circuit voltage, fill factor, and efficiency) of solar cells made under diverse circumstances were examined. The many types of solar cells were built, and the efficiency of power conversion was highlighted. Metal oxide films might be used as an electron transport layer, electron conducting medium, anti-reflecting layer, and hole transport material, according to the overall experimental results.

Author(s) Details:

Ho Soonmin,
Faculty of Health and Life Sciences, INTI International University, Putra Nilai, 71800, Negeri Sembilan, Malaysia.

Please see the link here: https://stm.bookpi.org/PCSR-V1/article/view/6756

Experimental Analysis of SnS:Cu Thin Films Obtained by USP for their Implementation in Solar Cells Simulated by SCAPS| Chapter 3 | Research Developments in Science and Technology Vol. 3

The ultrasonic spray pyrolysis (USP) process was used to make thin films of tin sulphide (SnS) doped with copper (SnS:Cu). Doping concentrations "y" (y = [Cu]/[Sn]) of 0 (no doping sample), 2, 5, and 10% have been proposed. The structural, morphological, chemical, optical, and electrical characteristics of the thin films were investigated utilising a variety of methods. The undoped sample has an orthorhombic structure, whereas the doped thin films have a cubic structure, according to X-ray diffraction (XRD). The inclusion of the dopant substance Cu may have caused a change in unit cell size, according to Raman spectroscopy. When y is raised, scanning electron microscopy (SEM) indicates an increase in grain density. The optical bandgap was determined by studying the transmittance and reflectance of the films using the UV-VIS spectroscopic method. The bandgap for the sample at y = 0% was found to be 3.51 eV, and this value rises for the doped samples as the parameter y increases. When the doping % is raised, the Hall–Van der Pauw approach shows an increase in carrier concentration and mobility but a decrease in resistivity.

Using the 1-dimensional SCAPS tool, the acquired experimental data was used to numerically simulate the material and its influence on a solar cell in order to replicate the material and its impact. To test the performance, several SnS:Cu doped absorber layers were proposed as absorber layers inside the solar device. The effect of SnS:Cu thickness on cell efficiency was debated.

Author(s) Details:

Sergio Rodríguez-Castro,
Tecnológico Nacional de México/Instituto Tecnológico de la Laguna, Torreón 27000, Coahuila, México.

Carlos Álvarez-Macías,
Tecnológico Nacional de México/Instituto Tecnológico de la Laguna, Torreón 27000, Coahuila, México.

Lizbeth Salgado-Conrado,
Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Coahuila, Torreón 27276, Coahuila, México.

Indira J. Ruiz-Heredia,
Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Coahuila, Torreón 27276, Coahuila, México.

Please see the link here: https://stm.bookpi.org/RDST-V3/article/view/6628

Experimental Investigation of FTIR Absorbance Versus Deposition Temperature of Vapour-Deposited Zinc Oxide Thin Films| Chapter 2 | Research Trends and Challenges in Physical Science Vol.8

 At temperatures of 330°C, 360°C, 390°C, and 420°C, zinc oxide thin films were formed on soda-lime glass substrates using the metalorganic chemical vapour deposition (MOCVD) method using zinc acetate as the precursor. Compressed air was used as the carrier gas, with a flow rate of 2.5 dm3 per minute. The depositions lasted two hours each and were carried out at atmospheric pressure. The thin films were then subjected to FTIR studies to determine their structure and trend with deposition temperatures. The Fourier Transform Infrared (FTIR) spectroscopy technique is a straightforward, non-destructive method for identifying all the elements in a substance. The measurements revealed the presence of lingering organic, oxide, and nitride functional groups, which prominently moderated the material's natural vibrational modes within their respective affiliate wavenumbers, as well as three minor but discernible trends in absorbance peaks, cut-off wavelength, and the presence of the functional groups with temperature. Improved solar cells, triggering sensor devices, p-doped zinc oxide, and other applications are expected to benefit from the materials developed.

Author(s) Details:

Uchenna Mbamara,
Department of Physics, Federal University of Technology, Owerri, Nigeria.

 

Please see the link here: https://stm.bookpi.org/RTCPS-V8/article/view/6008