Determination of Related Substances in Lansoprazole Intermediate by Using Stability-indicating HPLC Method | Chapter 9 | Advanced Concepts in Pharmaceutical Research Vol. 6

The present study determines the related substances in lansoprazole intermediate by using stability-indicating HPLC method. Lansoprazole intermediate is the critical raw material for synthesizing the drug substance, lansoprazole. The purity of the lansoprazole intermediate determines the quality of the lansoprazole drug substance with high yield in the synthetic process during the manufacturing. A novel, reversed-phase liquid chromatographic method was developed and validated to determine related substances in the lansoprazole intermediate. The symmetric peak shape was on a C18 stationary phase with the dimensions of 250 mm column length, 4.6 mm as internal diameter, and 5 microns particles with an economical and straightforward mass-compatible mobile phase combination of formic acid/triethylamine and acetonitrile delivered in gradient mode at a flow rate of 1.0 mL/min at 260 nm. The resolution between the lansoprazole intermediate and its impurities in the developed method was more than 2.0, indicating a significant separation. Regression analysis shows a correlation coefficient greater than 0.999 for lansoprazole intermediate and related substances. Lansoprazole Intermediate's detection and quantitation limits and impurities are 0.01% and 0.005%, respectively. This method indicates that the recovery at different levels is 90 to 110% accurate. The test solution was stable in the diluent for 48 hours. The results of forced degradation studies implied that the Lansoprazole Intermediate was sensitive to acid/base hydrolysis and oxidation conditions, and the mass balance was close to 99.5%. This study used the HPLC system Agilent Technologies 1200, a quaternary pump, an autosampler, and a diode array detector. The chromatographic output signal was monitored and processed by Empower software on an Intel Core i5 computer (Dell).

Author(s) Details:

Balaji Nagarajan,
New Jersey Bioscience Centre, 685, North Brunswick, New Jersey, 08902, USA.

Gunasekar Manoharan,
New Jersey Bioscience Centre, 685, North Brunswick, New Jersey, 08902, USA.

Please see the link here: https://stm.bookpi.org/ACPR-V6/article/view/13467

Experimental Investigation of FTIR Absorbance Versus Deposition Temperature of Vapour-Deposited Zinc Oxide Thin Films| Chapter 2 | Research Trends and Challenges in Physical Science Vol.8

 At temperatures of 330°C, 360°C, 390°C, and 420°C, zinc oxide thin films were formed on soda-lime glass substrates using the metalorganic chemical vapour deposition (MOCVD) method using zinc acetate as the precursor. Compressed air was used as the carrier gas, with a flow rate of 2.5 dm3 per minute. The depositions lasted two hours each and were carried out at atmospheric pressure. The thin films were then subjected to FTIR studies to determine their structure and trend with deposition temperatures. The Fourier Transform Infrared (FTIR) spectroscopy technique is a straightforward, non-destructive method for identifying all the elements in a substance. The measurements revealed the presence of lingering organic, oxide, and nitride functional groups, which prominently moderated the material's natural vibrational modes within their respective affiliate wavenumbers, as well as three minor but discernible trends in absorbance peaks, cut-off wavelength, and the presence of the functional groups with temperature. Improved solar cells, triggering sensor devices, p-doped zinc oxide, and other applications are expected to benefit from the materials developed.

Author(s) Details:

Uchenna Mbamara,
Department of Physics, Federal University of Technology, Owerri, Nigeria.

 

Please see the link here: https://stm.bookpi.org/RTCPS-V8/article/view/6008

Extraction and Separation of Nano-Sized Zirconia from in High Purity ZrO(NO) Using PC88A, D2EHPA and Determination of Impurities by ICP-MS | Chapter 5 | Challenges and Advances in Chemical Science Vol. 5

Many nuclear reactor components, especially the fuel cladding tubes, require high purity zirconium (Zr) elements. Separation from the Zr matrix is required to determine impurities in Zr materials due to the influence of the matrix. Solvent extraction is a typical extraction method that works well in large-scale manufacturing. The capacity of 2-ethylhexyl phosphonic acid mono 2-ethylhexyl ester (PC88A) and di-(2-ethylhexyl) phosphoric acid (D2EHPA) to extract Zr(IV) was investigated in this chapter using FT-IR, UV spectra of ZrO(NO3)2 salt, PC88A-toluene solvent, and Zr-PC88A-toluen ZrO2 (from the Institute for Technology of Radioactive and Rare Elements - ITRRE) and ZrCl4 (from Merck) are combined to make ZrO2 (NO3) 2, after being isolated from the Zr matrix, was tested for impurities using a 50 percent PC88A dissolved in toluene internal standard (indium, In). In two phases, impurities were removed from the Zr matrix. The Zr matrix and impurities were removed in 3.0 M HNO3 for one cycle using 50 percent PC88A/toluene. Second, contaminants were removed using 4.0-6.0 M HNO3 in two cycles. Approximately 74% of Zr(IV) was segregated into the organic phase, whereas 26% remained in the aqueous phase, according to the data. ICP-MS recovery of impurities after separation from the Zr matrix using an internal standard revealed a 95–100% recovery of impurities. With the amount of Zr given, the influence of the Zr matrix on ICP-MS element determination is negligible. Relative standard deviations (RSDs) of less than 6.9% and recoveries (Revs) of 88.6–98.8% were found in impurity levels. As a result, contamination assessment is exceedingly precise and trustworthy. Back-extraction of Zr(IV) in organic phase with 1.0 - 1.5 M H2SO4 returned 99.5 percent of the Zr matrix to the aqueous phase.

After that, NH3 was added to the Zr-containing solution to produce Zr(OH)4, which was then dehydrated to yield ZrO2. According to X-ray Diffraction (XRD), scanning and transmission electron microscopy (SEM and TEM) images, the new ZrO2 product has a spherical nanostructure with diameters of less than 25 nm, making it suitable for applications such as colourant treatment, metal ions in wastewater sources, and the manufacture of anti-corrosion steel. Furthermore, an energy dispersive X-ray (EDX) study of the new ZrO2 product demonstrated that it is exceptionally pure.

Author (S) Details

Nhuong Chu Manh

Faculty of Chemistry, Thai Nguyen University of Education, Thai Nguyen City 24000, Vietnam

N. T. H. Lan

Faculty of Chemistry, Thai Nguyen University of Education, Thai Nguyen City 24000, Vietnam.

M. X. Truong

Faculty of Chemistry, Thai Nguyen University of Education, Thai Nguyen City 24000, Vietnam.

D. T. Huong

Faculty of Chemistry, Thai Nguyen University of Education, Thai Nguyen City 24000, Vietnam.

N. T. T. Loan

Faculty of Chemistry, Thai Nguyen University of Education, Thai Nguyen City 24000, Vietnam.

View Book :- https://stm.bookpi.org/CACS-V5/article/view/3893

Determining the Effect of Annealing on the Crystal Structure of CoSi2/Si (100) Formed by MBE, SSE and RE Epitaxy Techniques| Chapter 3 | New Approaches in Engineering Research Vol. 5

 The paper presents original experimental results related to the study of the effect of annealing on the crystal structure of the surface of silicon doped with cobalt ions. The findings of research on CoSi2/Si(100) epitaxial structures formed by molecular beam epitaxy (MBE), solid phase epitaxy (SPE), and other techniques are presented. It has been established that there are relationships between the morphology, stoichiometry, and growth conditions of CoSi2/ Si structures. The Auger The ratios of the intensities of Auger signals of cobalt and silicon in the CoSi2 layer, as well as silicon in CoSi2 and silicon substrate, were determined using the sample profile. The authors back up the notion that under particular heat treatment circumstances, epitaxial silicides are generated due to radiation of a single crystal's surface, which can act as conductive layers or metal coated layers. MBE, SSE, and other technologies have been used to create structural state diagrams of CoSi2/Si (100) thin-film systems.

 
Author(s) Details

B. E. Egamberdiev
Tashkent State Technical University, Tashkent, Uzbekistan.

A. Sh. Mavlyanov
Tashkent State Technical University, Tashkent, Uzbekistan.

Sh. A. Sayfulloyev
Scientific Research Institute of Physics of Semiconductors and Microelectronics National University of Uzbekistan, Tashkent, Uzbekistan.

View Book :- https://stm.bookpi.org/NAER-V5/article/view/2084