Study on Enhancement of Microwave Absorption Properties on Modified Kapton Film by Ion Implantation Process | Chapter 3 | Research Trends and Challenges in Physical Science Vol.3

 The goal of this study is to use ions like iron (Fe) or Gadolinium (Gd) to change Kapton-polyimide films and evaluate the relationship between phase existence, magnetic characteristics, and microwave absorption. Ion implantation of Fe and Gd ions at a dose of 1 1017 ions/cm2 and energy ions of 30 keV were used to modify Kapton-polyimide sheets. The existence of phases such as iron oxide, or Gd-oxide, and graphitic Carbon was confirmed by X-ray diffraction (XRD). The films have a paramagnetic characteristic when measured with a Vibrating Sample Magnetometer (VSM). The parameters of microwave absorption (MWA) in the X band spectrum were measured using a Vector Network Analyzer (VNA) (8-12GHz). The MWA of modified Kapton film by Fe and Gd ions was increased from -22dB for Kapton original film to -35dB for S11 vector direction and up to -40dB for S22 vector direction, according to VNA measurements. It may be deduced that the nanostructure of implanted Fe-oxide or Gd-oxide nanoparticles on the Kapton film's near-surface has a role in determining the film's MWA capabilities.

Author(S) Details

S. Purwanto
Centre for Science and Technology of Advance Materials-BATAN, Puspiptek, Serpong 15314, Tangerang Selatan, Banten Province, Indonesia.

A. A. Wisnu
Centre for Science and Technology of Advance Materials-BATAN, Puspiptek, Serpong 15314, Tangerang Selatan, Banten Province, Indonesia.

Yana Taryana
Research Center for Electronics and Telecomunication –LIPI, Bandung Indonesia.

E. Sukirman
Centre for Science and Technology of Advance Materials-BATAN, Puspiptek, Serpong 15314, Tangerang Selatan, Banten Province, Indonesia.

View Book:- https://stm.bookpi.org/RTCPS-V3/article/view/4499

Determination of Surface Modified CVD Diamond/ Si(111) Film Post Implanted Ion Fe-B and NiFe-B Related to Magnetoresistance Properties | Chapter 9 | Recent Trends in Chemical and Material Sciences Vol. 3

 STEM has been used to investigate the nanostructure of Fe-B and NiFe-B after implantation on CVD diamond/Si(111) films, as well as their Magnetoresistance(MR) phenomena. Two samples were extensively examined: the first is a post NiFe-B sample with an E=70keV and a dose of 1015 ions/cm2; the second sample is a pre-NiFe-B sample with an E=70keV and a dose of 1015 ions/cm (denoted as A-E3D1). Second, at E=20 keV and a dosage of 1015 ions/cm2, is post FeB. (denoted as B-E1D1). The MR ratio in A-E3D1 sample is around 80 percent, while the MR ratio in B-E1D1 sample is 45 percent, based on FPP measurements at room temperature (RT) and Happlied=8 kOe. According to STEM-EDX research, there are two reasons why the MR ratio of A-E3D1 is larger than that of B-E1D1. To begin with, the surface nanostructure on the top of the A-E3D1 film is more grazing than the top of the B-E1D1 film. The formation of an amorphous carbon layer on top of the implanted diamond film with a thickness of roughly 100 nm was detected using a scanning transmission electron microscope (STEM) equipped with Electron Energy Loss Spectroscopy (EELS). Boron atoms were detected in a uniform distribution inside the carbon amorphous layer. Second, the oxygen level at the diamond film-silicon substrate interface in sample A-E3D1 was lower than in sample B-E1D1. As a result of this condition, the resistance value in A-E3D1 is lower than in B-E1D1. This result is consistent with Raman Spectroscopy data, implying that changes in the Raman spectrum due to implantation are related to Oxygen excitation from the B-E1D1 sample and magnetic film characteristics, respectively.

Author (S) Details 

Setyo Purwanto

Center for Science and Technology for Advanced Material -BATAN, Puspiptek Area, Tangerang-1314, Indonesia. 

R. Iskandar

Central Facility for Electron Microscopy, RWTH Aachen, Germany.

  A. Dimyati

Center for Science and Technology for Advanced Material -BATAN, Puspiptek Area, Tangerang-1314, Indonesia.

M. Salim

Center for Science and Technology for Advanced Material -BATAN, Puspiptek Area, Tangerang-1314, Indonesia.

A. A. Wisnu

Center for Science and Technology for Advanced Material -BATAN, Puspiptek Area, Tangerang-1314, Indonesia.

View Book :- https://stm.bookpi.org/RTCAMS-V3/article/view/4133

Determining the Effect of Annealing on the Crystal Structure of CoSi2/Si (100) Formed by MBE, SSE and RE Epitaxy Techniques| Chapter 3 | New Approaches in Engineering Research Vol. 5

 The paper presents original experimental results related to the study of the effect of annealing on the crystal structure of the surface of silicon doped with cobalt ions. The findings of research on CoSi2/Si(100) epitaxial structures formed by molecular beam epitaxy (MBE), solid phase epitaxy (SPE), and other techniques are presented. It has been established that there are relationships between the morphology, stoichiometry, and growth conditions of CoSi2/ Si structures. The Auger The ratios of the intensities of Auger signals of cobalt and silicon in the CoSi2 layer, as well as silicon in CoSi2 and silicon substrate, were determined using the sample profile. The authors back up the notion that under particular heat treatment circumstances, epitaxial silicides are generated due to radiation of a single crystal's surface, which can act as conductive layers or metal coated layers. MBE, SSE, and other technologies have been used to create structural state diagrams of CoSi2/Si (100) thin-film systems.

 
Author(s) Details

B. E. Egamberdiev
Tashkent State Technical University, Tashkent, Uzbekistan.

A. Sh. Mavlyanov
Tashkent State Technical University, Tashkent, Uzbekistan.

Sh. A. Sayfulloyev
Scientific Research Institute of Physics of Semiconductors and Microelectronics National University of Uzbekistan, Tashkent, Uzbekistan.

View Book :- https://stm.bookpi.org/NAER-V5/article/view/2084