Determination of Surface Modified CVD Diamond/ Si(111) Film Post Implanted Ion Fe-B and NiFe-B Related to Magnetoresistance Properties | Chapter 9 | Recent Trends in Chemical and Material Sciences Vol. 3

 STEM has been used to investigate the nanostructure of Fe-B and NiFe-B after implantation on CVD diamond/Si(111) films, as well as their Magnetoresistance(MR) phenomena. Two samples were extensively examined: the first is a post NiFe-B sample with an E=70keV and a dose of 1015 ions/cm2; the second sample is a pre-NiFe-B sample with an E=70keV and a dose of 1015 ions/cm (denoted as A-E3D1). Second, at E=20 keV and a dosage of 1015 ions/cm2, is post FeB. (denoted as B-E1D1). The MR ratio in A-E3D1 sample is around 80 percent, while the MR ratio in B-E1D1 sample is 45 percent, based on FPP measurements at room temperature (RT) and Happlied=8 kOe. According to STEM-EDX research, there are two reasons why the MR ratio of A-E3D1 is larger than that of B-E1D1. To begin with, the surface nanostructure on the top of the A-E3D1 film is more grazing than the top of the B-E1D1 film. The formation of an amorphous carbon layer on top of the implanted diamond film with a thickness of roughly 100 nm was detected using a scanning transmission electron microscope (STEM) equipped with Electron Energy Loss Spectroscopy (EELS). Boron atoms were detected in a uniform distribution inside the carbon amorphous layer. Second, the oxygen level at the diamond film-silicon substrate interface in sample A-E3D1 was lower than in sample B-E1D1. As a result of this condition, the resistance value in A-E3D1 is lower than in B-E1D1. This result is consistent with Raman Spectroscopy data, implying that changes in the Raman spectrum due to implantation are related to Oxygen excitation from the B-E1D1 sample and magnetic film characteristics, respectively.

Author (S) Details 

Setyo Purwanto

Center for Science and Technology for Advanced Material -BATAN, Puspiptek Area, Tangerang-1314, Indonesia. 

R. Iskandar

Central Facility for Electron Microscopy, RWTH Aachen, Germany.

  A. Dimyati

Center for Science and Technology for Advanced Material -BATAN, Puspiptek Area, Tangerang-1314, Indonesia.

M. Salim

Center for Science and Technology for Advanced Material -BATAN, Puspiptek Area, Tangerang-1314, Indonesia.

A. A. Wisnu

Center for Science and Technology for Advanced Material -BATAN, Puspiptek Area, Tangerang-1314, Indonesia.

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