Ion Irradiation Effect on Structure and Magnetic Properties of Multilayer Fe/Si | Book Publisher International

 This book was written in the hopes that readers, particularly young researchers and students, would be able to learn more about how Argon ion irradiation affects multilayer thin film systems, with a focus on Fe/Si metal-semiconductor systems, and how it is linked to magnetoresistance (MR) properties. This issue is significant because it covers the phenomena of physical characteristics, which are crucial in comprehending MR phenomena at the nanoscale scale. The Helicon Sputering technique is used to create thin films with thicknesses in the nanoscale range, a technology that allows for extremely precise film creation. Furthermore, it can be demonstrated that ion irradiation has an effect on MR characteristics, which can be linked to the interfacial structure between the Fe and Si layers. Several characterization techniques, such as Conversion Electron Mossbauer Spectroscopy (CEMS), Rutherford Back Scattering (RBS), and confirmation with Vibrating Sample Magnetometer(VSM) and Four Point Probe(FPP) for the magnetic and MR properties of post-irradiated thin film systems, can clarify this effect. This book can add to our understanding of how ion irradiation alters the physical properties of thin films and reduces the sensitivity of thin-film sensors like magnetic sensors.

The book is divided into five chapters, the first of which is an introduction to the current state of research on the GMR phenomena in multilayer Fe/Cr and Fe/Si. In Chapter 2, we discussed the basic theory of GMR in multilayer and exchange interactions, as well as the synthesis process of Helicon plasma Sputtering. In Chapter 3, we discussed the materials, synthesis methods, and characterization of multilayer films. In Chapter 4, we went through the pre-irradiation and post-irradiation of Argon ions in relation to the Fe/Si multilayer and its structure model in great depth. The conclusion concerning the influence of ion irradiation on the structure and magnetic characteristics of multilayer Fe/Si is found in Chapter 5.

Author(s) Details

Setyo Purwanto
National Agency for Research and Innovation (BRIN), Puspiptek, Serpong 15314, Tangerang Selatan, Banten Provence, Indonesia.

View Book:- https://stm.bookpi.org/IIESMPM/article/view/5944

Determination of Surface Modified CVD Diamond/ Si(111) Film Post Implanted Ion Fe-B and NiFe-B Related to Magnetoresistance Properties | Chapter 9 | Recent Trends in Chemical and Material Sciences Vol. 3

 STEM has been used to investigate the nanostructure of Fe-B and NiFe-B after implantation on CVD diamond/Si(111) films, as well as their Magnetoresistance(MR) phenomena. Two samples were extensively examined: the first is a post NiFe-B sample with an E=70keV and a dose of 1015 ions/cm2; the second sample is a pre-NiFe-B sample with an E=70keV and a dose of 1015 ions/cm (denoted as A-E3D1). Second, at E=20 keV and a dosage of 1015 ions/cm2, is post FeB. (denoted as B-E1D1). The MR ratio in A-E3D1 sample is around 80 percent, while the MR ratio in B-E1D1 sample is 45 percent, based on FPP measurements at room temperature (RT) and Happlied=8 kOe. According to STEM-EDX research, there are two reasons why the MR ratio of A-E3D1 is larger than that of B-E1D1. To begin with, the surface nanostructure on the top of the A-E3D1 film is more grazing than the top of the B-E1D1 film. The formation of an amorphous carbon layer on top of the implanted diamond film with a thickness of roughly 100 nm was detected using a scanning transmission electron microscope (STEM) equipped with Electron Energy Loss Spectroscopy (EELS). Boron atoms were detected in a uniform distribution inside the carbon amorphous layer. Second, the oxygen level at the diamond film-silicon substrate interface in sample A-E3D1 was lower than in sample B-E1D1. As a result of this condition, the resistance value in A-E3D1 is lower than in B-E1D1. This result is consistent with Raman Spectroscopy data, implying that changes in the Raman spectrum due to implantation are related to Oxygen excitation from the B-E1D1 sample and magnetic film characteristics, respectively.

Author (S) Details 

Setyo Purwanto

Center for Science and Technology for Advanced Material -BATAN, Puspiptek Area, Tangerang-1314, Indonesia. 

R. Iskandar

Central Facility for Electron Microscopy, RWTH Aachen, Germany.

  A. Dimyati

Center for Science and Technology for Advanced Material -BATAN, Puspiptek Area, Tangerang-1314, Indonesia.

M. Salim

Center for Science and Technology for Advanced Material -BATAN, Puspiptek Area, Tangerang-1314, Indonesia.

A. A. Wisnu

Center for Science and Technology for Advanced Material -BATAN, Puspiptek Area, Tangerang-1314, Indonesia.

View Book :- https://stm.bookpi.org/RTCAMS-V3/article/view/4133