Formation Kinetics of Radiation Defects Created by Negative Pions and Muons in Crystals with Diamond Structure| Chapter 3 | Newest Updates in Physical Science Research Vol. 6

 In crystals having diamond structures, the evolution of radiation defects caused by negatively charged pions and muons over time is studied. Negative pions and muons are caught by nuclei and ionise an appropriate host atom, resulting in a positively charged lattice radiation defect. An acceptor centre is produced as a result of the radiation defect's progression over time. For the first time, a comprehensive analysis of the evolution process is considered. There are three steps to the formation of this acceptor centre. The radiation defect interacts with a radiation trace and captures it in the first stage. electrons. The radiation defect is neutralized completely in Si an Ge for a short time 𝑡 ≲ 10−11𝑠, but in diamond the complete neutralization time is very large 𝑡 ≳ 10−6 . At the second stage broken The radiation defect's chemical bonds are repaired. This mechanism occurs for the neutral radiation defect in Si and Ge, but it occurs for a positively charged state in diamond. The typical period of time of this stage is 𝑡 < 10−8𝑠 for Si and Ge, and 𝑡 < 10−11𝑠 for diamond. After the chemical bonds resurfacing The electron density redistribution immediately neutralises the positively charged but chemically bond radiation defect in diamond. The lattice relaxation time characterises the neutralisation process. A neutral chemically bond radiation defect acquires an extra electron in the third stage, saturating all chemical bonds and forming an ionised acceptor centre. The electron capture is caused by the presence of a sufficiently large electric dipolar moment. For diamond, silicon, and germanium crystals, qualitative time estimations for this technique were obtained. It was foreseen that this would happen. time is the shortest for diamond (≲ 10−8𝑠) and the longest for silicon (≲ 10−7𝑠). The main part of the results is published in [1].

 Author (s) Details

Yu. M. Belousov
Moscow Institute of Physics and Technology, 141700, Dolgoprudny, Institutsky lane 9, Russia.

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