Third generation solar cell researchers are paying close attention to thin films of multi-layered nanocrystalline silicon (nc-Si). The multi-layered amorphous hydrogenated a-Si:H/a-SiO2 films created by plasma enhanced chemical vapour deposition (PECVD) are reported in this chapter. The nc-Si/a-SiO2 multilayer was then produced by annealing the thin film that had just been formed at 1100°C. For the purpose of verifying the crystal structure, X-ray diffraction (XRD) analysis was used to examine the structure of the thin film in its as-deposited and annealed state. The production of an ultrathin specimen of a multilayer film made of (nc-Si/a-SiO2) using the Ar+ ion slicing (milling) process is also covered in this chapter. The Ar+ ion slicing process includes a number of preliminary processes, such as cutting, glueing, and mechanical thinning. This cutting technique produces a narrow cross-section with a high yield that is suited for high resolution transmission electron microscopy (HR-TEM) investigation. This chapter provides a step-by-step account of the process for preparing an ultra-thin cross-sectional specimen for TEM (XTEM). Using TEM and HR-TEM modes, the textured multi-layers and the thickness of nc-Si/a-SiO2 were examined.
Author (s) Details
R. Siddheswaran
PG & Research Department of Physics,
Pachaiyappa’s College, Chennai-600030, India.
Rostislav Medlin
New Technologies Research Centre,
University of West Bohemia in Pilsen, Plzen-30614, Czech Republic.
Pavel Calta
New Technologies Research Centre, University
of West Bohemia in Pilsen, Plzen-30614, Czech Republic.
C. Esther Jeyanthi
Department of Physics, Panimalar
Engineering College, Chennai-600123, India.
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