Studies on the Reentrant Four-Layer Quasi-Elliptic Bandstop Filter| Chapter 2 | Recent Developments in Engineering Research Vol. 8

 For the first time, this study proposes a novel approach to designing a reentrant structure with additional symmetrical reflection zeros at the lower and upper pass bands of the stop band, resulting in a quasielliptic frequency response that improves the filter's output and selectivity. The novel quasi-elliptic microwave bandstop philtre, which uses the strip transmission lines that were initially uncoupled, is Considered in this study. In promoting distortion reductions across the radio frequency (RF) and microwave cultures, the microwave bandstop philtres (BSFs) play an important role. The proposed philtre is based on the structure of the reentrant, where the floating potential metallic body is asymmetric. Inequal relative permittivities must be available for the internal and external dielectric fillings. As a consequence, at the lower and upper pass bands of the stop band, additional symmetrical reflection zeros are reached, leading to the quasi-elliptic function response that increases the selectivity of the philtre. In terms of a series connection of multi-ports, the general transverse electromagnetic (TEM) circuit model for the proposed philtre is presented and then used to predict the initial electrical and geometrical philtres. About parameters. To test the design principle, an experimental printed circuit prototype was manufactured and evaluated. The calculated philtre parameters match well with those obtained from the simulation and this increases the degree of freedom in selective microwave frequency manufacturing. Ingredients. The proposed reentrant is due to the asymmetric metallic body with floating potential,  The philtre is intended to be used in different types of frequency selective devices as a basic building block.  That paves the way for a variety of applications, including technologies for LTCC and SIW.

Author (s) Details

Victor V. Atuchin
Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, 630090 Novosibirsk, Russia,Laboratory of Semiconductor and Dielectric Materials, Novosibirsk State University, 630090 Novosibirsk, Russia and Research and Development Department, Kemerovo State University, 650000 Kemerovo, Russia.


Anatoly P. Gorbachev
Radio-Receiving and Radio-Transmitting Devices Department, Novosibirsk State Technical University, 630073 Novosibirsk, Russia.


Vladimir A. Khrustalev
Department of Electronic Devices, Novosibirsk State Technical University, 630073 Novosibirsk, Russia.



Natalya V. Tarasenko
General Physics Department, Novosibirsk State Technical University, 630073 Novosibirsk, Russia.



View Book :- https://bp.bookpi.org/index.php/bpi/catalog/book/333