As a pivotal component in modern electronics devices, TFTs
play a crucial role as a switching element in display and flexible electronics.
This comprehensive work meticulously explores the electrical properties of ZnO
TFTs, with different gate dielectrics offering a detailed investigation of the
underlying materials, diverse fabrication techniques, and strategies for
optimizing performance.
The first section of the book provides a general introduction of the TFT, its
applications and physical processes involved in TFT. A brief review of the
works on TFTs is also introduced in this section. In the next section an
insightful overview of the materials used and methodology adopted in
fabrication of ZnO TFTs is presented.
The core of the book focuses elaborately on the investigation of the electrical
properties of ZnO TFTs with different gate dielectric materials such as Nd2O3,
La2O3 and Al2O3 using different fabrication techniques viz. thermal
evaporation, chemical bath deposition and sol-gel technique. Key aspects such
as field effect mobility, threshold voltage, sub-threshold swing, gain
bandwidth product etc. are explored in depth. Furthermore the effect of
annealing temperature in ambient and oxygen atmosphere on the TFT
characteristics are also investigated and presented.
Author(s) Details:
Paragjyoti Gogoi,
Department of Physics, Sibsagar College, Joysagar (Autonomous),
Sivasagar, Assam, India.
Please see the link here: https://stm.bookpi.org/EPZTFT/article/view/13456
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