This article discusses the dielectric properties of poly
(9-vinylcarbazole) (PVK) and ferrocene-doped PVK thin films. The article
discusses the preparation of the thin films and the measurement of their
dielectric properties as a function of ferrocene concentration, frequency, and
temperature. The poly (N-vinyl carbazole) (PVK) is a well-known hole transport
polymer; therefore, this material is suitable for clarifying the effect of the
injected holes on the breakdown process in polymer thin film. The thin films
were grown by the isothermal solution casting technique. Dielectric properties
of grown films were studied as function of ferrocene concentration, frequency,
and temperature. The relative permittivity
(ε') is increased with increasing
ferrocene percentage (~1%) due to the free charge carriers. The relative
permittivity decreases for higher ferrocene percentage (~2%). However, the
relative permittivity of PVK and ferrocene-doped PVK samples remains almost
constant for studied temperature range (313–413 K). The frequency dependence of tan σ for all samples is studied. The frequency
dependence of dielectric parameter exhibits frequency dispersion behavior,
which suggests all types of polarization present in the lower frequency range.
The loss tangent (tan σ) values are larger at higher temperatures in the low
frequency region. However, the tan σ values at different temperatures are
almost similar in the high frequency region. It is observed that the relative
permittivity is maximum, dielectric loss is minimum, and AC conductivity is
minimum for 1% ferrocene doped PVK as compared to pure PVK and 2% ferrocene
doped PVK samples. The temperature effect is more pronounced in the
low-frequency region. The conductivity of PVK is increased as the ferrocene
dopant concentration of increases up to 2%. The higher conductivity is related
to the additional hopping sites for the charge carriers.
Author(s) Details:
Hari Chandra Nayak,
Department of Physics, Govt. P. G. College Jobat, Alirajpur 457990,
India.
Shivendra Singh
Parmar,
Department
of Chemistry, Faculty of Sciences, Shri Krishna University, Chhatarpur 471001,
India.
Rajendra Prasad Kumhar,
Department of Physics, Maharaja Chhatrasal Bundelkhan University,
Chhatarpur 471001, India.
Shailendra Rajput,
Department of Electrical and Electronic Engineering, Ariel
University, Ariel 40700, Israel.
Please see the link here: https://stm.bookpi.org/CPPSR-V7/article/view/13454
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