The objective of this chapter book is to investigate the transport charge carriers responsible for the Fowler-Nordheim current type and to analyze the temperature effect on the different parameters that characterize this class of transport process. These parameters are the effective mass of charge carriers in the oxide (mox), the effective mass of charge carriers in the semiconductor (msc), the barrier height of charge carriers (φB), and the corrected oxide voltage (Vcorr). To determine the above-cited parameters, the vertical optimization method (VOM) on the current-voltage curves as a function of temperature was used. Contrarily to other methods used previously, simultaneously those parameters were extracted, whereas the others have to use known mox and msc to determine φB or vice versa, moreover, the correction of the oxide voltage is taken from literature or calculated from the capacitance-voltage curves or the Mott-Schottky equation or other procedures. The VOM is insensitive to the errors associated with measurements and represents a remarkable degree of accuracy and robustness.
The influence of temperature on the characterized parameters of
the studied structure offers insights into the conditions of the
oxide/semiconductor interface and provides guidance for optimizing
circumstances in specific oxide and semiconductor applications. Additionally,
this investigation serves as a useful tool for future technological
applications of oxides and provides valuable considerations for fabricating MOS
structures.
Author
(s) Details
S.
Toumi
Department of Physics, Faculty of Science, M’hamed Bouguara
University, Boumerdes, Algeria and Couches minces and Hétérostructures
Laboratory, Unité de Recherche: Matériaux, Procédés et Environnement, M’hamed
Bougara University, Boumerdes, Algeria.
T.
Guerfi
Department of Physics, Faculty of Science, M’hamed Bouguara
University, Boumerdes, Algeria and Couches minces and Hétérostructures
Laboratory, Unité de Recherche: Matériaux, Procédés et Environnement, M’hamed
Bougara University, Boumerdes, Algeria.
Please see the book here:- https://doi.org/10.9734/bpi/crpps/v5/3289
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