Characterization of Fowler-Nordheim Tunneling and Temperature Effects in Metal-Oxide-Semiconductor Structures Using Vertical Optimization | Chapter 8 | Current Research Progress in Physical Science Vol. 5

The objective of this chapter book is to investigate the transport charge carriers responsible for the Fowler-Nordheim current type and to analyze the temperature effect on the different parameters that characterize this class of transport process. These parameters are the effective mass of charge carriers in the oxide (m_ox), the effective mass of charge carriers in the semiconductor (m_sc), the barrier height of charge carriers (φ_B), and the corrected oxide voltage (V_corr). To determine the above-cited parameters, the vertical optimization method (VOM) on the current-voltage curves as a function of temperature was used. Contrarily to other methods used previously, simultaneously those parameters were extracted, whereas the others have to use known m_ox and m_sc to determine φ_B or vice versa, moreover, the correction of the oxide voltage is taken from literature or calculated from the capacitance-voltage curves or the Mott-Schottky equation or other procedures. The VOM is insensitive to the errors associated with measurements and represents a remarkable degree of accuracy and robustness.

The influence of temperature on the characterized parameters of the studied structure offers insights into the conditions of the oxide/semiconductor interface and provides guidance for optimizing circumstances in specific oxide and semiconductor applications. Additionally, this investigation serves as a useful tool for future technological applications of oxides and provides valuable considerations for fabricating MOS structures.

 

Author (s) Details

S. Toumi
Department of Physics, Faculty of Science, M’hamed Bouguara University, Boumerdes, Algeria and Couches minces and Hétérostructures Laboratory, Unité de Recherche: Matériaux, Procédés et Environnement, M’hamed Bougara University, Boumerdes, Algeria.

 

T. Guerfi
Department of Physics, Faculty of Science, M’hamed Bouguara University, Boumerdes, Algeria and Couches minces and Hétérostructures Laboratory, Unité de Recherche: Matériaux, Procédés et Environnement, M’hamed Bougara University, Boumerdes, Algeria.

 

Please see the book here:- https://doi.org/10.9734/bpi/crpps/v5/3289

Study on Memristor and Its Applications | Chapter 2 | New Approaches in Engineering Research Vol. 8

 Moore's law has led to the exponential advancement in computer and information technology over the last several decades, with successive downscaling of complementary metal-oxide-semiconductor (CMOS) transistors. Magnetic flux and electric charge are the only two electromagnetic quantities for which there are no pairings out of the six potential relationships. RS devices are also intriguing prospects for bio-inspired computing and in-memory computing, in addition to memory applications. The RS devices can be employed in a crossbar shape in computing systems to accomplish Vector Matrix Multiplication (VMM). The conclusion is that RS devices have advanced significantly during the last 15 years. RS devices have provided commercial memory products and have also been widely used in neuromorphic computing applications, delivering considerable benefits for real-time data processing with high throughput and low energy consumption.

Author (s) Details

R. Hamsavahini
Department of Electronics and Communication Engineering, BMSIT&M, Bangalore, India.

N. Rashmi
Department of Electronics and Communication Engineering, BMSIT&M, Bangalore, India.

R. Sabina
Department of Electronics and Communication Engineering, BMSIT&M, Bangalore, India.

K. B. Jagannatha
Department of Electronics and Communication Engineering, BMSIT&M, Bangalore, India.

C. T. Saneesh
Department of Electronics and Communication Engineering, BMSIT&M, Bangalore, India.

H. S. Laxmisagar
Department of Electronics and Communication Engineering, BMSIT&M, Bangalore, India.

T. Thyagaraj
Department of Electronics and Communication Engineering, BMSIT&M, Bangalore, India.

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