The effect of a quartz plate (window) on the silicon wafer
temperature is studied in the conditions of the combined thermal transfer in a
lamp-based chamber for the rapid thermal treatment (RTP) set up. The quartz
window influence, as a rule, is considered by restriction of the spectral
interval for the heater emission in the spectral range from 0.4 to 4.0 µm. The
chamber for RTP is simulated by a radiative-closed thermal system including the
influence of quartz window as a spectral filter of lamp emission and a source
of emitted thermal radiation. Energy equations for thermal fluxes involved in
the heat input and output from the working wafer and quartz window are solved
in spectral approximation. The model of the chamber composed of the three
plates with different spectral ranges of the heater radiation can be considered
as two limiting cases of the chamber model including the quartz window. The transfer characteristics that are defined
by the temperature dependences of the silicon wafer and the quartz window on
the temperature of the heater are accounted. It is shown that temperature
bistability in the silicon wafer initiates induced bistability into the quartz
window that does not reveal bistable behaviour because of the linear
temperature dependence of its total optical characteristics. The width and the
locations of the loops are exactly in accordance with the same parameters for
the silicon wafer transfer characteristics. A possibility for simulation of the
quartz window by spectral restriction of the heater radiation is confirmed. The
availability of the weak bistable effect in the mode of zero effective heat
exchange coefficient of a non-radiative component of the thermal flux removed
from the working wafer has been obtained. In this case, the efficiency of the
radiative heat removal from the silicon wafer in the low-temperature state is
insufficient that the wafer is maintained in the stationary state.
Author(s) Details:
Valeriya P. Prigara,
Valiev Institute of Physics and Technology of Russian Academy of
Sciences, Yaroslavl Branch, Russia.
Aleksandr
N. Kupriyanov,
Valiev
Institute of Physics and Technology of Russian Academy of Sciences, Yaroslavl
Branch, Russia.
Vladimir V. Ovcharov,
Valiev Institute of Physics and Technology of Russian Academy of
Sciences, Yaroslavl Branch, Russia and Yaroslavl State Agrarian University,
Yaroslavl, Russia.
Please see the link here: https://stm.bookpi.org/CICMS-V6/article/view/13606
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