MoTe2 (molybdenum ditelluride) is a two-dimensional material
that has gained significant interest in the field of electronics because of its
unique electronic properties. 2H MoTe2 (molybdenum ditelluride) has generated
significant interest because of its superconducting, nonvolatile memory, and
semiconducting of new materials, and it has a large range of electrical
properties. The combination of transition metal dichalcogenides (TMDCs) and
two-dimensional (2D) materials like hexagonal boron nitride (h-BN) in lateral
heterostructures offers a unique platform for designing and engineering novel
electronic devices. We report the fabrication of highly conductive interfaces
in crystalline ionic liquid-gated (ILG) field-effect transistors (FETs)
consisting of a few layers of MoTe2/h-BN heterojunctions. An optical microscope
was used to characterize the structural morphology and three-dimensional
schematics of the transistor, including the thickness of the MoTe2 and h-BN
thin films. In our initial exploration of tellurium-based semiconducting TMDs,
we directed our attention to MoTe2 crystals with thicknesses exceeding 12 nm.
Our primary focus centered on investigating the transport characteristics and
quantitatively assessing the surface interface heterostructure. Our
transconductance (gm) measurements indicate that the very efficient carrier
modulation with an ILG FET is two times larger than standard back gating, and
it demonstrates the unipolarity of the device. The ILG FET exhibited highly
unipolar p-type behavior with a high on/off ratio, and it significantly
increased the mobility in MoTe2/h-BN hetero-channels, achieving improvement as
one of the highest recorded mobility increments. Specifically, we observed hole
and electron mobility values ranging from 345 cm2 V−1 s−1 to 285 cm2 V−1 s−1 at
80 K. We predict that our ability to observe the intrinsic, heterointerface
conduction in the channels was due to a drastic reduction of the Schottky
barriers, and electrostatic gating is suggested as a method for controlling the
phase transitions in the few layers of TMDC FETs. Moreover, the simultaneous
structural phase transitions throughout the sample, achieved through
electrostatic doping control, present new opportunities for developing phase
change devices using atomically thin membranes.
Author(s) Details:
Kamoladdin Saidov,
Department of Electronics and Radio Engineering, Tashkent University
of Information Technologies, Tashkent 100200, Uzbekistan and Department of
Information Technologies, Tashkent International University of Education,
Tashkent 100207, Uzbekistan.
Gurdial Blugan
Laboratory for High Performance Ceramics, Empa, Swiss Federal Laboratories for
Materials Science and Technology, 8600 Dübendorf, Switzerland.
Olim Ruzimuradov
Department of Natural and Mathematic Sciences, Turin Polytechnic University
in Tashkent, Tashkent 100095, Uzbekistan.
Please see the link here: https://stm.bookpi.org/CICMS-V9/article/view/14334
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