Recombination of N- atoms in N2 flowing afterglows is well characterized by optical emission of the N2, positive yellow band at 580 nm which is considered as a signature of N-atoms in the afterglow at reduced and high gas pressures. Production of π2(π΅,π£′) states are analyzed from the π2, positive band intensity in Ar- π2 and π2 afterglows of microwave plasmas and in N2 Corona discharges. In Ar- N2 afterglows of microwave discharges, the N2( B,v′) distribution depends on the N2 fraction in Ar. In pure π2 afterglows, it is found that the π2(π΅,π£′ = 11) state is enhanced by the π +π atom recombination at pressure up to the atmospheric gas pressure. The other N2( B,v′ > 0) states are also produced in N2 and Ar − N2 Corona and microwave afterglows by the π+π atom recombination, via the π2(π΄3Ξ£+π’,π€3Ξπ’) attractive curves. It appears that the relaxation of vibrational levels of π2(π΄) and π2(π€) states at the benefit of the π2(π΅,π£′ = 0) state is enhanced in Corona as in Dielectric Barrier Discharge (DBD) afterglows.
Author (s) Details
AndrΓ© Ricard
LAPLACE, UniversitΓ© de Toulouse, CNRS, INPT, UPS, 118 route de Narbonne,
31062 Toulouse Cedex 9, France.
Freddy Gaboriau
LAPLACE, UniversitΓ© de Toulouse, CNRS, INPT, UPS, 118 route de Narbonne,
31062 Toulouse Cedex 9, France.
Anne-Marie Pointu
LPGP, UniversitΓ© de Paris-Saclay, 91405 Orsay, France.
Please see the book here:- https://doi.org/10.9734/bpi/mono/978-93-49473-93-5/CH19
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