Characterization of Electrodeposited Mn-Cu-Zn Coating for Corrosion Protection | Chapter 6 | Current Topics and Emerging Issues in Materials Sciences Vol. 1

 Preparation of new hardware alloy coatings capable of looking after steel from corrosion is a big objective of electrochemical deposition and working galvanotechnics. A growing interest of researchers in alloys electrodeposition is for the most part caused for one cost-effectiveness of ingot coatings due to inexpensive and environmental electrolytes used.  In that regard, of particular interest was the feasibility of obtaining manganese alloys from high anti-disintegration performance accompanying suitable mechanical features. Manganese, a metal accompanying high negative standard potential (-1.18V, SHE) is chemically alive and easily reacts with air oxygen and liquid. Despite their high effect, electrocoatings of clean manganese are fragile and either of impact are easily removed from a fortify surface to get shielded from corrosion. To decrease chemical endeavor and brittleness of manganese, it is mixed with metals of lower negative standard potential, like with Cu, Zn and others.The aim of present research is obtaining of excellence coating of Mn-Cu-Zn alloy, determination of limits of electrolysis, electrolyte composition, effect of photoelectric current density on synthetic composition, morphology and form of coatings. Also, corrosion tests of electrodeposited alloys are intentional.

Author(s) Details:

Gigla Tsurtsumia,
TSU, Rafael Agladze Institute of Inorganic Chemistry and Electrochemistry, 11 Mindeli Str., Tbilisi 0186, Georgia.

David Gogoli,
TSU, Rafael Agladze Institute of Inorganic Chemistry and Electrochemistry, 11 Mindeli Str., Tbilisi 0186, Georgia.

Nana Koiava,
TSU, Rafael Agladze Institute of Inorganic Chemistry and Electrochemistry, 11 Mindeli Str., Tbilisi 0186, Georgia.

Izolda Kakhniashvili,
TSU, Rafael Agladze Institute of Inorganic Chemistry and Electrochemistry, 11 Mindeli Str., Tbilisi 0186, Georgia and Georgian Technical University, 69 Kostava Str., Tbilisi 0176, Georgia.

Nunu Jokhadze,
TSU, Rafael Agladze Institute of Inorganic Chemistry and Electrochemistry, 11 Mindeli Str., Tbilisi 0186, Georgia.

Tinatin Lezhava,
TSU, Rafael Agladze Institute of Inorganic Chemistry and Electrochemistry, 11 Mindeli Str., Tbilisi 0186, Georgia.

Nikoloz Nioradze,
TSU, Rafael Agladze Institute of Inorganic Chemistry and Electrochemistry, 11 Mindeli Str., Tbilisi 0186, Georgia.

Dimitri Tatishvili,
G. Tsulukidze Mining Institute, 7 Mindeli Str., Tbilisi 0186, Georgia.

Please see the link here: https://stm.bookpi.org/CTEIMS-V1/article/view/10313

Analysing the Sputtered Al Doped ZnO on Oriented Cu2O Heterojunction Solar Cell with Improved Performance | Chapter 1 | Recent Trends in Chemical and Material Sciences Vol. 1

 Cu2O/AZO photovoltaic (PV) devices that are electrodeposited are promising low-cost solar cells. During the sputtering process, both layers of Cu2O and AZO heterojunction topologies are investigated as a function of AZO target-Cu2O substrate distance. The Cu2O/AZO PV device was made by electrodepositing a 111>-p-Cu2O layer on an Au (111)/Si wafer substrate and then sputtering the AZO layer on top. Under AM1.5 illumination, the Cu2O/AZO PV device demonstrated photovoltaic performance, which varied depending on the target-substrate distance. The damage at the Cu2O/AZO interface was reduced by increasing the target-substrate distance when sputtering the AZO layer. As a result, the Voc and power conversion efficiency were improved from 0.16 V and 0.46 percent to 0.30 V and 0.64 percent, respectively.

Author (s) Details

Ts. Dr. M. Zamzuri
Faculty of Mechanical Engineering Technology, Universiti Malaysia Perlis, Kampus Tetap Pauh Putra, Jln Arau-Changlun, 02600, Arau, Perlis, Malaysia.

M. Marina
Faculty of Mechanical Engineering Technology, Universiti Malaysia Perlis, Kampus Tetap Pauh Putra, Jln Arau-Changlun, 02600, Arau, Perlis, Malaysia.

R. N. Ahmad
Faculty of Mechanical Engineering Technology, Universiti Malaysia Perlis, Kampus Tetap Pauh Putra, Jln Arau-Changlun, 02600, Arau, Perlis, Malaysia.

M. Mat Salleh
Faculty of Mechanical Engineering Technology, Universiti Malaysia Perlis, Kampus Tetap Pauh Putra, Jln Arau-Changlun, 02600, Arau, Perlis, Malaysia.

Ts. Dr. C. C. Lee
Senior Lecturer, Faculty of Mechanical Engineering Technology, Universiti Malaysia Perlis, Kampus Tetap Pauh Putra, Jln Arau-Changlun, 02600, Arau, Perlis, Malaysia.

Ts. Dr. Z. Nooraizedfiza
Faculty of Mechanical Engineering Technology, Universiti Malaysia Perlis, Kampus Tetap Pauh Putra, Jln Arau-Changlun, 02600, Arau, Perlis, Malaysia.

Assoc. Prof. Dr.F. Mohamad
Faculty of Electrical and Electronic Eng. University Tun Hussein Onn Malaysia, 86400 Parit Raja, Batu Pahat, Johor, Malaysia.

N. Hisyamudin
Faculty of Electrical and Electronic Eng. University Tun Hussein Onn Malaysia, 86400 Parit Raja, Batu Pahat, Johor, Malaysia.

M. Izaki
Department of Mechanical Eng., Toyohashi University of Technology, 1-1 Hibari Gaoka, Tenpaku, Toyohashi, Aichi 441-8580, Japan.

View Book :- https://stm.bookpi.org/RTCAMS-V1/article/view/2178

Recent Research on Non-Lithographic Fabrication of Ni-Se Heterojunction Nanowires and Their Electrical Characterization | Chapter 2 | Recent Advances in Science and Technology Research Vol. 8

 In this paper, Ni-Se heterojunction nanowires are produced via the process of template-assisted electrodeposition. Scanning electron microscopy (SEM), Energy Dispersive X-Ray Spectroscopy (EDS), X-ray diffractometry and electrical transport studies characterise nanowires. The uniform and dense growth of Ni-Se nanowires is revealed by SEM photographs. The crystalline nature of Ni-Se nanowires is shown by the pattern of X-ray diffraction. The much higher proportion of Ni compared to Se is demonstrated by the EDS spectrum. The resonant tunnelling diodes (RTDs) illustrate a collective current-voltage characteristic of heterojunction nanowires as a conduct with a peak to valley current ratio of 1.37 at room temperature. This technique is ideal for synthesising the desired diameter and duration of mono dispersive nanowires. Peak current, which is a significant feature, is observed at low voltage and provides the possibility of creating electronic devices with low power dissipation.

Author(s) Details

Kanchan Kumari

Department of Electronics and Communication Engineering, Punjab Technical University/ BBSBEC, Fatehgarh Sahib, Punjab, India.

Vijay Kumar
Department of Material Science and Engineering, Punjab Technical University/ PCET, Lalru Mandi, Punjab, India.

Karamjeet Singh
Department of Electronics and Communication Engineering, Punjab Technical University/ BBSBEC, Fatehgarh Sahib, Punjab, India.

View Book :- https://bp.bookpi.org/index.php/bpi/catalog/book/342