Showing posts with label Si. Show all posts
Showing posts with label Si. Show all posts

Wednesday, 28 May 2025

Rectangular Trace Application in the Reduction of the Crosstalk of a Coupled Microstrip Line | Chapter 5 | Engineering Research: Perspectives on Recent Advances Vol. 7

In microwave circuit, the microstrip line has many problems one of these problems are crosstalk (coupling). Coupling is an important problem for the circuits that have multi-lines, which is induced by the difference between the capacitive coupling ratio (Cm=CT) and inductive coupling ratio. This problem is still very important due to the usage of the Very Large-Scale Integration. The study shows that the microstrip lines can be easily adapted to the small dimensions. The study aims to investigate the use of rectangular trace to reduce the crosstalk of the coupled microstrip lines. New electronic products must have high-speed, small size and lower voltages supply. With such layout, signal integrity (SI) becomes an actual important issue because sensitive equipment is affected on electromagnetic interference (EMI). Crosstalk is a major factor in signal integrity (SI) of printed circuit boards (PCBs). Crosstalk noise is usually represented in terms of Near-End crosstalk (NEXT) and FarEnd crosstalk (FEXT). Crosstalk is a common problem that degrades circuit performance. To reduce this problem, via hole-fences connected by guard trace between double microstrip lines are used, in this case the crosstalk will be reduce by 6 dB than use 3 W rule, but when it replaced by rectangular metal the crosstalk was reduce by 7 dB , is better than use via holefences by 1 dB . The simulation result was done by using FEKO 5.5 simulator. In conclusion, changing and reducing the crosstalk between double microstrip lines was compared to three techniques, using rectangular trace between microstrip lines new method compared it with the other two methods (3W rule and using via fence) all have the same dimensions.

 

Author (s) Details

Ahmed Ali Hussein
Department of Electrical and Electronic Engineering, Eastern Mediterranean University, Gazimagusa North, Cyprus.

 

Please see the book here:- https://doi.org/10.9734/bpi/erpra/v7/4984

 

Friday, 19 August 2022

Recent Advances in Properties of ‘Physics/Electrical Engineering’ Materials | Book Publisher International

 In this book named "Late Advances in Properties of 'Physical science/Electrical Engineering' Materials" by me, are given the new advances in fields of Physics/Electrical Engineering Materials.

Initial four sections give my Research-Papers on Conductivity of Noble Metals, Mobility of Intrinsic Ge and Si and Dipole Relaxation Time for Polar Water Molecules alongside Quantum Aspects of Dipole-Aerial-Radiation from Noble Metals (0.3 MHz-30 MHz), each close to Room Temperatures.

While next three parts are on my Research-Papers on Quantum Plasma Physics/(Quantum) Plasma Communication Electronics managing Determination of Charge to Mass Ratio of an Electron and Classical Radius of a Gas Molecule involving Knowledge of Electronic Damped Oscillations in Plasma followed by Quantum Statistical Plasma Model and Quantum Noise in Plasma because of Electron-Ion Collisions.

Further section is on my Research-Paper on Analysis of Radiation from Photosphere of the Sun.

Also, my last three Research-Papers examine Quantum Electromagnetic Photon Wave age because of complex-charge and complex-mass of electrons.

Author(s) Details:

Deepak Nandedkar,
Department of Electrical Engineering, Indian Institute of Technology, Bombay, Powai, Mumbai, India.

Please see the link here: https://stm.bookpi.org/RAPPEEM/article/view/7848